Light-emitting diodes (LEDs) have drawn tremendous potential as a replacement of traditional lighting due to its low-power consumption and longer lifetime. Nowadays, the practical white LEDs (WLED) are contingent on the photon down-conversion of phosphors containing rare-earth elements, which limits its utility, energy, and cost efficiency. In order to resolve the energy crisis and to address the environmental concerns, designing a direct WLED is highly desirable and remains a challenging issue. To circumvent the existing difficulties, in this report, we have designed and demonstrated a direct WLED consisting of a strontium-based metal-organic framework (MOF), {[Sr(ntca)(H2O)2]·H2O}n (1), graphene, and inorganic semiconductors, which can generate a bright white light emission. In addition to the suitable design of a MOF structure, the demonstration of electrically driven white light emission based on a MOF is made possible by the combination of several factors including the unique properties of graphene and the appropriate band alignment between the MOF and semiconductor layer. Because electroluminescence using a MOF as an active material is very rare and intriguing and a direct WLED is also not commonly seen, our work here therefore represents a major discovery which should be very useful and timely for the development of solid-state lighting.
Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in InSnSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of InSnSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.
Plasmonic nanolasers provide a valuable opportunity for expanding sub‐wavelength applications. Due to the potential of on‐chip integration, semiconductor nanowire (NW)‐based plasmonic nanolasers that support the waveguide mode attract a high level of interest. To date, perovskite quantum dots (QDs) based plasmonic lasers, especially nanolasers that support plasmonic‐waveguide mode, are still a challenge and remain unexplored. Here, metallic NW coupled CsPbBr3 QDs plasmonic‐waveguide lasers are reported. By embedding Ag NWs in QDs film, an evolution from amplified spontaneous emission with a full width at half maximum (FWHM) of 6.6 nm to localized surface plasmon resonance (LSPR) supported random lasing is observed. When the pump light is focused on a single Ag NW, a QD‐NW coupled plasmonic‐waveguide laser with a much narrower emission peak (FWHM = 0.4 nm) is realized on a single Ag NW with the uniform polyvinylpyrrolidone layer. The QDs serve as the gain medium while the Ag NW serves as a resonant cavity and propagating plasmonic lasing modes. Furthermore, by pumping two Ag NWs with different directions, a dual‐wavelength lasing switch is realized. The demonstration of metallic NW coupled QDs plasmonic nanolaser would provide an alternative approach for ultrasmall light sources as well as fundamental studies of light matter interactions.
The many distinct advantages of random lasers focused efforts on developing a breakthrough from optical pumping to electrical pumping. However, progress in these is limited due to high optical loss and low gain. In this work, we demonstrate an electrically pumped quantum dot (QD) random laser with visible emission based on a previously unexplored paradigm named coherent Förster resonance energy transfer (CFRET). In the CFRET process, when a coherent photonic mode is formed because of multiple scattering of the emitted light traveling in mixed donor and acceptor QDs, the donor QDs not only serve as scattering centers but are also enable coherent energy transfer to acceptor QDs. Therefore, the laser action can be easily achieved, and the lasing threshold is greatly reduced. Our approach of electrically pumped QD-based random lasers represents a substantial step toward a full-spectrum random laser for practical applications.
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