In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 μW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the layered-materials realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ∼ 655 A W(-1) operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ∼ 4.0 × 10(4)%) and specific detectivity (D* ∼ 2.35 × 10(13) Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications.

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

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Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in InSnSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of InSnSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.

Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In 1−x Sn x Se phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In 1−x Sn x Se flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In 1−x Sn x Se crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In 1−x Sn x Se have higher mobility than in InSe. The internally boosted electrical properties of In 1−x Sn x Se exhibit ultrahigh mobility of 2560 ± 240 cm 2 V −1 s −1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In 1−x Sn x Se flakes are highly sensitive with a detectivity of 10 14 Jones. It possesses a large photoresponsivity and photogain (V g = 40 V) as high as 3 × 10 5 A W −1 and 0.5 × 10 6 , respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In 1−x Sn x Se-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.

Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump–probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W–1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.

The emerging Weyl semi‐metals with robust topological surface states are very promising candidates to rationally develop new‐generation electrocatalysts for dye‐sensitized solar cells (DSSCs). In this study, a chemical vapor deposition (CVD) method to synthesize highly crystalline Weyl semi‐metallic MoxW1‐xTe2 nanocrystals, which are applied for the counter electrode (CE) of DSSCs for the first time, are employed. By controlling the temperature‐dependent phase‐engineered synthesis, the nanocrystal grown at 760 °C exhibits the mixed phases of semiconducting Td‐ & 2H‐Mo0.32W0.67Te2.01 with charge carrier density of (1.20 ± 0.02) × 1019 cm−3; whereas, the nanocrystal synthesized at 820 °C shows a single phase of semi‐metallic Td‐Mo0.29W0.72Te1.99 with much higher carrier density of (1.59 ± 0.04) × 1020 cm−3. In the cyclic voltammetry (CV) analysis over 200 cycles, the MoxW1‐xTe2‐based electrodes show better stability in the I−/I3− electrolyte than a Pt electrode. In DSSC tests, a Td‐Mo0.29W0.72Te1.99‐decorated CE achieves the efficiency (η) of 8.85%, better than those CEs fabricated with Td‐ & 2H‐Mo0.32W0.67Te2.01 (7.81%) and sputtered Pt (8.01%). The electrochemical impedance spectra reveal that the Td‐Mo0.29W0.72Te1.99 electrode possesses low charge‐transfer resistance in electrocatalytic reactions. These exceptional properties make Weyl semi‐metallic Td‐MoxW1‐xTe2 a potential electrode material for a wide variety of electrocatalytic applications.

Ultrathin Td-Mo0.27W0.71Te2.02 films synthesized using a chemical vapor deposition method exhibit a non-saturating magnetoresistance of 11% at room temperature.