Metal‐organic frameworks (MOFs) have recently emerged as attractive materials for their tunable properties, which have been utilized for diverse applications including sensors, gas storage, and drug delivery. However, the high porosity and poor electrical conductivity of MOFs restrict their optoelectronic applications. Owing to the inherent tunability, a broadband photon absorbing MOF can be designed. Combining the superior properties of the MOFs along with ultrahigh carrier mobility of graphene, for the first time, this study reports a highly sensitive, broadband, and wearable photodetector on a polydimethylsiloxane substrate. The external quantum efficiency of the hybrid photodetector is found to be >5 × 108%, which exceeds all the reported values of similar devices. The porosity of the MOF and ripple structure graphene can assist the trapping of photons at the light‐harvesting layer. The device photoresponsivity is found to be >106 A W−1 with a response time of <150 ms, which is approximately ten times faster than the current standards of the graphene‐organic hybrid photodetectors. In addition, utilizing the excellent flexibility of the graphene layer the wearability of the devices with stretchability up to 100% is demonstrated. The unique discovery of MOF‐based high‐performance photodetectors opens up a new avenue in organic–inorganic hybrid optoelectronics.

Numerous investigations of photon upconversion in lanthanide-doped upconversion nanoparticles (UCNPs) have led to its application in the fields of bioimaging, biodetection, cancer therapy, displays, and energy conversion. Herein, we demonstrate a new approach toward lanthanidedoped UCNPs and a graphene hybrid planar and rippled structure photodetector. The multi-energy sublevels from the 4f n electronic configuration of lanthanides results in longer excited state lifetime for photogenerated charge carriers. This opens up a new regime for ultra-high-sensitivity and broadband photodetection. Under 808 nm infrared light illumination, the planar hybrid photodetector shows a photoresponsivity of 190 AW −1 , which is higher than the currently reported responsivities of the same class of devices. Also, the rippled graphene and UCNPs hybrid photodetector on a poly(dimethylsiloxane) substrate exhibits an excellent stretchability, wearability, and durability with high photoresponsivity. This design makes a significant contribution to the ongoing research in the field of wearable and stretchable optoelectronic devices.

Dual-functional devices that can simultaneously detect light and emit light have a tremendous appeal for multiple applications, including displays, sensors, defense, and high-speed optical communication. Despite the tremendous efforts of scientists, the progress of integration of a phototransistor, where the built-in electric field separates the photogenerated excitons, and a light-emitting diode, where the radiative recombination can be enhanced by band offset, into a single device remains a challenge. Combining the superior properties of perovskite quantum dots (PQDs) and graphene, here we report a light-emissive, ultrasensitive, ultrafast, and broadband vertical phototransistor that can simultaneously act as an efficient photodetector and light emitter within a single device. The estimated value of the external quantum efficiency of the vertical phototransistor is ∼1.2 × 10 10 % with a photoresponsivity of >10 9 A W −1 and a response time of <50 μs, which exceed all the presently reported vertical phototransistor devices. We also demonstrate that the modulation of the Dirac point of graphene efficiently tunes both amplitude and polarity of the photocurrent. The device exhibits a green emission having a quantum efficiency of 5.6%. The moisture-insensitive and environmentally stable, light-emissive, ultrafast, and ultrasensitive broadband phototransistor creates a useful route for dual-functional optoelectronic devices.

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In 1−x Sn x Se phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In 1−x Sn x Se flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In 1−x Sn x Se crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In 1−x Sn x Se have higher mobility than in InSe. The internally boosted electrical properties of In 1−x Sn x Se exhibit ultrahigh mobility of 2560 ± 240 cm 2 V −1 s −1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In 1−x Sn x Se flakes are highly sensitive with a detectivity of 10 14 Jones. It possesses a large photoresponsivity and photogain (V g = 40 V) as high as 3 × 10 5 A W −1 and 0.5 × 10 6 , respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In 1−x Sn x Se-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.

Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in InSnSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of InSnSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.

Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump–probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W–1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.

Self-healing technology promises a generation of innovation in cross-cutting subjects ranging from electronic skins, to wearable electronics, to point-of-care biomedical sensing modules. Recently, scientists have successfully pulled off significant advances in self-healing components including sensors, energy devices, transistors, and even integrated circuits. Lasers, one of the most important light sources, integrated with autonomous self-healability should be endowed with more functionalities and opportunities; however, the study of self-healing lasers is absent in all published reports. Here, the soft and self-healable random laser (SSRL) is presented. The SSRL can not only endure extreme external strain but also withstand several cutting/healing test cycles. Particularly, the damaged SSRL enables its functionality to be restored within just few minutes without the need of additional energy, chemical/electrical agents, or other healing stimuli, truly exhibiting a supple yet robust laser prototype. It is believed that SSRL can serve as a vital building block for next-generation laser technology as well as follow-on self-healing optoelectronics.