Metal‐organic frameworks (MOFs) have recently emerged as attractive materials for their tunable properties, which have been utilized for diverse applications including sensors, gas storage, and drug delivery. However, the high porosity and poor electrical conductivity of MOFs restrict their optoelectronic applications. Owing to the inherent tunability, a broadband photon absorbing MOF can be designed. Combining the superior properties of the MOFs along with ultrahigh carrier mobility of graphene, for the first time, this study reports a highly sensitive, broadband, and wearable photodetector on a polydimethylsiloxane substrate. The external quantum efficiency of the hybrid photodetector is found to be >5 × 108%, which exceeds all the reported values of similar devices. The porosity of the MOF and ripple structure graphene can assist the trapping of photons at the light‐harvesting layer. The device photoresponsivity is found to be >106 A W−1 with a response time of <150 ms, which is approximately ten times faster than the current standards of the graphene‐organic hybrid photodetectors. In addition, utilizing the excellent flexibility of the graphene layer the wearability of the devices with stretchability up to 100% is demonstrated. The unique discovery of MOF‐based high‐performance photodetectors opens up a new avenue in organic–inorganic hybrid optoelectronics.

Numerous investigations of photon upconversion in lanthanide-doped upconversion nanoparticles (UCNPs) have led to its application in the fields of bioimaging, biodetection, cancer therapy, displays, and energy conversion. Herein, we demonstrate a new approach toward lanthanidedoped UCNPs and a graphene hybrid planar and rippled structure photodetector. The multi-energy sublevels from the 4f n electronic configuration of lanthanides results in longer excited state lifetime for photogenerated charge carriers. This opens up a new regime for ultra-high-sensitivity and broadband photodetection. Under 808 nm infrared light illumination, the planar hybrid photodetector shows a photoresponsivity of 190 AW −1 , which is higher than the currently reported responsivities of the same class of devices. Also, the rippled graphene and UCNPs hybrid photodetector on a poly(dimethylsiloxane) substrate exhibits an excellent stretchability, wearability, and durability with high photoresponsivity. This design makes a significant contribution to the ongoing research in the field of wearable and stretchable optoelectronic devices.

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Visible blind near-infrared (NIR) photodetection is essential when it comes to weapons used by military personnel, narrow band detectors used in space navigation systems, medicine, and research studies. The technological field of filterless visible blind, NIR omnidirectional photodetection and wearability is at a preliminary stage. Here, we present a filterless and lightweight design for a visible blind and wearable NIR photodetector capable of harvesting light omnidirectionally. The filterless NIR photodetector comprises the integration of distinct features of lanthanide-doped upconversion nanoparticles (UCNPs), graphene, and micropyramidal poly(dimethylsiloxane) (PDMS) film. The lanthanide-doped UCNPs are designed such that the maximum narrow band detection of NIR is easily accomplished by the photodetector even in the presence of visible light sources. Especially, the 4f electronic configuration of lanthanide dopant ions provides for a multilevel hierarchical energy system that provides for longer lifetime of the excited states for photogenerated charge carriers to transfer to the graphene layer. The graphene layer can serve as an outstanding conduction path for photogenerated charge carrier transfer from UCNPs, and the flexible micropyramidal PDMS substrate provides an excellent platform for omnidirectional NIR light detection. Owing to these advantages, a photoresponsivity of ∼800 AW is achieved by the NIR photodetector, which is higher than the values ever reported by UCNPs-based photodetectors. In addition, the photodetector is stretchable, durable, and transparent, making it suitable for next-generation wearable optoelectronic devices.

Ultrathin p-conjugated two-dimensional (2D) polymers (C2P) have the potential to revolutionize semiconductor technologies because of their predicted high carrier transport attributes. Bulk 2D polymers, also called covalent organic frameworks, are generally unprocessable, and their exfoliation to ultrathin C2Ps has not been realized. We present a rational bottom-up design strategy to access ultrathin C2Ps with high crystallinity in solution by choosing appropriate monomers, linkage chemistry, and reaction conditions. The C2Ps exhibit high hole mobilities and allow broadband photodetection with impressive photoresponsivities.

Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in InSnSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of InSnSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.

Tuning the optical and electrical properties by stacking different layers of two-dimensional (2D) materials enables us to create unusual physical phenomena. Here, we demonstrate an alternative approach to enhance charge separation and alter physical properties in van der Waals heterojunctions with type-II band alignment by using thin dielectric spacers. To illustrate our working principle, we implement a hexagonal boron nitride (h-BN) sieve layer in between an InSe/GeS heterojunction. The optical transitions at the junctions studied by photoluminescence and the ultrafast pump–probe technique show quenching of emission without h-BN layers exhibiting an indirect recombination process. This quenching effect due to strong interlayer coupling was confirmed with Raman spectroscopic studies. In contrast, h-BN layers in between InSe and GeS show strong enhancement in emission, giving another degree of freedom to tune the heterojunction property. The two-terminal photoresponse study supports the argument by showing a large photocurrent density for an InSe/h-BN/GeS device by avoiding interlayer charge recombination. The enhanced charge separation with h-BN mediation manifests a photoresponsivity and detectivity of 9 × 102 A W–1 and 3.4 × 1014 Jones, respectively. Moreover, a photogain of 1.7 × 103 shows a high detection of electrons for the incident photons. Interestingly, the photovoltaic short-circuit current is switched from positive to negative, whereas the open-circuit voltage changes from negative to positive. Our proposed enhancement of charge separation with 2D-insulator mediation, therefore, provides a useful route to manipulate the physical properties of heterostructures and for the future development of high-performance optoelectronic devices.

Self-healing technology promises a generation of innovation in cross-cutting subjects ranging from electronic skins, to wearable electronics, to point-of-care biomedical sensing modules. Recently, scientists have successfully pulled off significant advances in self-healing components including sensors, energy devices, transistors, and even integrated circuits. Lasers, one of the most important light sources, integrated with autonomous self-healability should be endowed with more functionalities and opportunities; however, the study of self-healing lasers is absent in all published reports. Here, the soft and self-healable random laser (SSRL) is presented. The SSRL can not only endure extreme external strain but also withstand several cutting/healing test cycles. Particularly, the damaged SSRL enables its functionality to be restored within just few minutes without the need of additional energy, chemical/electrical agents, or other healing stimuli, truly exhibiting a supple yet robust laser prototype. It is believed that SSRL can serve as a vital building block for next-generation laser technology as well as follow-on self-healing optoelectronics.