A Bi-Anti-Ambipolar Field Effect Transistor

Abstract

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor

“…Due to this attractive feature, multivalued logic circuits (MVLs), such as ternary and quaternary inverters, have recently been realized, and their development is another significant strategy for improving the data processing capability of the currently used logic circuits. [39][40][41][42][43][44][45] In contrast to the abovementioned efforts on MVLs, our approach is to apply AATs to electrically reconfigurable logic circuits. A dual-gate configuration enables the control of the used Λ-shaped drain current by three input signals: bottom-gate, top-gate, and drain voltages.…”

“…Due to this attractive feature, multivalued logic circuits (MVLs), such as ternary and quaternary inverters, have recently been realized, and their development is another significant strategy for improving the data processing capability of the currently used logic circuits. [ 39–45 ]…”

Polarity‐Switchable and Self‐Driven Photo‐Response Based on Vertically Stacked Type‐III GeSe/SnS2 Heterojunction

“…However, up to now, the anti‐ambipolarity is mainly realized in the heterojunctions with type‐II band arrangement. [ 25 ] Moreover, the most combination categories are based on transition metal dichalcogenides vdWs (MoTe 2 ‐MoS 2 , [ 21 ] WSe 2 ‐WS 2 [ 26 ] ). In previous, anti‐ambipolar characteristic is low repeatability and hindered by the traditional substrate (mostly Si/SiO 2 substrate causing large gate voltage region).…”

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

“…In the past decade, a variety of dimensionally abrupt heterostructures have been realized on the basis of layered 2D semiconductors for their atomically smooth surface and pronounced electronic characteristics. − Particularly, the emergence of 2D van der Waals (vdW) heterostructures has expanded the possibility of diverse nanoscale functional devices through integrating disparate materials with artificially stacked architectures. These devices include light-emitting diodes, − nonvolatile memory cells, , Schottky junction devices, , complementary metal-oxide-semiconductor (CMOS) inverters, , and tunneling field-effect transistors. , The most prominent among these vdW nanodevices is the realization of anti-ambipolar transistors, with the first demonstration reported in carbon nanotube–MoS 2 p–n heterostructures and more recently in various vdW heterojunctions, such as single-walled carbon nanotube (SWCNT)–amorphous indium gallium zinc oxide (α-IGZO), pentacene–MoS 2 , WSe 2 –WS 2 , SnO–MoS 2 , InSe–WSe 2 , and ReS 2 –Te heterostructures . The anti-ambipolar behavior can be deemed as deriving from the field-effect transistor (FET) channel composed of p-type and n-type semiconductors in series.…”

“…These devices include light-emitting diodes, 5−7 nonvolatile memory cells, 8,9 Schottky junction devices, 10,11 complementary metal-oxide-semiconductor (CMOS) inverters, 12,13 and tunneling field-effect transistors. 14,15 The most prominent among these vdW nanodevices is the realization of anti-ambipolar transistors, with the first demonstration reported in carbon nanotube−MoS 2 p−n heterostructures 16 and more recently in various vdW heterojunctions, such as single-walled carbon nanotube (SWCNT)−amorphous indium gallium zinc oxide (α-IGZO), 17 pentacene−MoS 2 , 18 WSe 2 − WS 2 , 19 SnO−MoS 2 , 20 InSe−WSe 2 , 21 and ReS 2 −Te heterostructures. 22 The anti-ambipolar behavior can be deemed as deriving from the field-effect transistor (FET) channel composed of p-type and n-type semiconductors in series.…”