In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures with a high aspect ratio could be used both in sensors and solar cells. It has been shown that application of the metal-assisted chemical etching (MACE) process enables to significantly improve the short-circuit current density in silicon solar cells (up to 29 mA/cm2). Also, the possibility of detection of hydrogen peroxide and glucose (via enzymatic reaction) by resistor-like sensors with nanostructured silicon as the sensitive area has been demonstrated with the sensitivity up to 2.5…2.75 mA/V•%.
Abstract. Sensors based on MOSFET with por-Si layer at the back-gate part and with H2О2 catalyst (Pt-nanoparticles) investigation was done. Back-gate changes were done by MASE technology. The porous structure analysis, measurement dimension of Pt nanoparticles was performed. And also we represented the influence thus nanoparticles for sensor sensitivity. Аннотация. Было проведено исследования сенсоров на базе МДН-транзисторов со слоем пористого кремния и катализатором перекиси водорода ( наночастицами платины) на обратной стороне подложки со стороны затвора. Изменения тыльной стороны сенсора производилась методом металл-стимулированного химического травления. Произведено анализ пористой структуры, измерено размер наночастиц платины и их влияние на чувствительность сенсора. Используя аппроксимации вольт-амперных характеристик при разных концентрациях перекиси водорода рассчитано чувствительность сенсора, которая составляет не менее 0,135 мкА/ppm. Рассчитано энергетическую активность реакции каталитического распада H 2 О 2 та ее влияние на результаты эксперимента.Ключевые слова: МДН-транзистор, сенсор, перекис водорода, пористый кремний, Pt на-ночастицы
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