H2 O2 Sensor Based on Mosfet With Active Back-Gate Part of Substrate

Kutova, Oksana Yuriivna; Dusheiko, Mykhailo; Obukhova, Tetyana; Maksimchuk, N.; Borodinova, T. I.; Tymofeev, V.

doi:10.18524/1815-7459.2017.4.116007

Cited by 4 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a gate dielectric, the SiO2 -CeO2 complex (dSiO2= 10 nm, dCeO2=50 nm) was obtained, which was get by thermal oxidation at T=400ºC and the method of "oxidation of a metal mirror", respectively [8]. The ohmic contacts were made of Al [9]. The maximum thickness of the gate dielectric in these transistors was 1.5 ÷ 2 nm.…”

Section: Sensor Designmentioning

confidence: 99%

Beta-Lactoglobulin Sensor Based on ISFET with CеO2 Gate Dielectric

Kutova

Tymofieiev

Dusheiko

et al. 2019

Mìkrosist. elektron. akust.

View full text Add to dashboard Cite

In this article sensor with improved measurement technique for the detection of milk allergens was developed. β-lactoglobulin (BLG) protein was used as the biomarker for cow milk detection. The structure of the sensor with nanocrystalline cerium oxide is proposed with an advanced measurement method, which consists of using a micro-flow system to provide a constant volume of the substance to be tested for the dynamic analysis of the beta-lactoglobulin protein, the major milk allergen. The influence of illumination on the experiment and the degree of cleaning of the sensor surface between each measurement are analyzed. Because the existing ELISA method is too long (1.5 hours), and the proposed method allows to identify the presence of beta-lactoglobulin in a few minutes.

show abstract

Section: Sensor Designmentioning

confidence: 99%

Beta-Lactoglobulin Sensor Based on ISFET with CеO2 Gate Dielectric

Kutova

Tymofieiev

Dusheiko

et al. 2019

Mìkrosist. elektron. akust.

View full text Add to dashboard Cite

show abstract

“…There is two main types of hydrogen peroxide sensors -electrochemical sensors [13]- [15] and FET-based sensors [16], [17]. First type of sensors needs to be immersed in solution that is not always possible but the second type needs for detection only a very little amount of solution (less than 0.1 ml) that is more useful for in-field detection.…”

Section: Introductionmentioning

confidence: 99%

“…In this work a MISFET (metal-insulator-semiconductor field effect transistor) was chosen as the basic sensor but, unlike conventional FET sensors, sensitive area was formed on the rear side of the sensor [17].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen Peroxide Measurements by MISFET and LET Structures with Rear Porous Silicon Layer and Metallic Nanoparticles

Kutova

Obukhova

Dusheiko

et al. 2018

Mìkrosist. elektron. akust.

View full text Add to dashboard Cite

In the paper hydrogen peroxide MISFET and LET sensor performance is investigated. As hydrogen peroxide is a product of many chemical reactions, especially biological reactions, peroxide sensors are now widely used for detection of another. In this work, a combination of two nanostructures that are now used for hydrogen peroxide detection-porous silicon and metal nanoparticles was used. A MISFET (metal-insulator-semiconductor field effect transistor) was chosen as the basic sensor but unlike conventional FET sensors sensitive area was formed on the rear side of the sensor. In the aim to simplify sensor structure a LET (lighteffect transistor) with sensitive area on the rear side was also tested. LET structure was produced by the same technology as FET, but then subgate system was removed by chemical etching. Porous silicon was formed by metal-assisted chemical etching (MACE) that consists of two stages. During the first stage, metallic nanoparticles are deposited on the surface by chemical or physical deposition. During second one these particles become catalysts of chemical reaction and pores are formed under them. Pore shape and density depend on both stages conditions. Formation of porous silicon on the rear side leads to changes of substrate charge and influence gate-source curve as well as drain-source curve. Drain current for FET with an active area is lower due to the negative charge accumulated in porous silicon thanks to high tie connections concentration. Dependence of LET drain current on LED intensity (current) is almost linear and drain-source curves are similar to FET structure ones. FET samples with porous silicon/Pt and LET samples with porous silicon/Ag both show more stable and well-defined dependence of drain current on hydrogen peroxide concentration then samples without porous layer. All sensors have saturation of drain current from concentrations of hydrogen peroxide about 0.5-1% and dependence on concentration is first order exponential decay, obviously due to saturation of working area by reaction products or heating effect of hydrogen peroxide decomposition. In concentration range up to 0.3%

show abstract