This paper provides an overview of two topics. First, it presents a unified approach to various techniques addressing the non-uniqueness of the solution of the inverse gravimetric problem; alternative, simple proofs of some known results are also given. Second, it summarizes in a concise and self-contained way a particular multiscale regularization technique involving scaling functions and wavelets. 0266-5611/08/045019+25$30.00

We present a method for local etching of the tip region of insulator-coated carbon nanotubes (CNTs) towards passivated nanoprobes. By reactive ion etching (RIE), a 20-nm-thick SiO2 layer, which was uniformly wrapped around vertically oriented CNTs, was selectively removed from the tip, maintaining the crystallinity of inner CNT. It was found that the length of exposed CNT is controlled via etching time at an etching rate of 16 nm/min. This local etching was achieved by RIE using CF4 as an etchant, and photoresist as a passivation mask.

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A new surface potential based poly-Si TFT model for circuit simulation was developed, accounting for the influence of both deep and tail states across the band gap. The model describes the drain current for all regions of operation using the unified equation. Calculations using the drain current model produce results that are in good agreement with the measured I-V characteristics of poly-Si TFTs.

A surface-potential-based compact model for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) was developed, accounting for the effects of both deep and tail states across the band gap. The model describes the drain current in all regions of operation using the unified equation without the use of threshold voltage as an input parameter. Calculations using the drain current model produce results that are in good agreement with the measured current-voltage characteristics of poly-Si TFTs.