A photodetector using a two-dimensional (2D) low-direct band gap indium selenide (InSe) nanostructure fabricated by the focused ion beam (FIB) technique has been investigated. The FIB-fabricated InSe photodetectors with a low contact resistance exhibit record high responsivity and detectivity to the ultraviolet and visible lights. The optimal responsivity and detectivity up to 1.8 × 10 A W and 1.1 × 10 Jones, respectively, are much higher than those of the other 2D material-based photoconductors and phototransistors. Moreover, the inherent photoconductivity (PC) quantified by the value of normalized gain has also been discussed and compared. By excluding the contribution of artificial parameters, the InSe nanoflakes exhibit an ultrahigh normalized gain of 3.2 cm V, which is several orders of magnitude higher than those of MoS, GaS, and other layer material nanostructures. A high electron mobility at room temperature reaching 450 cm V s has been confirmed to be one of the major causes of the inherent superior PC in the InSe nanoflakes. The oxygen-sensitized PC mechanism that enhances carrier lifetime and carrier collection efficiency has also been proposed. This work demonstrates the devices fabricated by the FIB technique using InSe nanostructures for highly efficient broad-band optical sensing and light harvesting, which is critical for development of the 2D material-based ultrathin flexible optoelectronics.

No abstract

Here, we analyze the effect of Cr doping on WSe crystals. The topology and the chemistry of the doped samples have been investigated by atom-resolved scanning transmission electron microscopy combined with electron energy loss spectroscopy. Cr (measured to have formal valence 3+) occupies W sites (formal valence 4+), indicating a possible hole doping. However, single or double Se vacancies cluster near Cr atoms, leading to an effective electron doping. These defects organization can be explained by the strong binding energy of the Cr-V complex obtained by density functional theory calculations. In highly Cr-doped samples, a local phase transition from the 2H to the to 1T phase is observed, which has been previously reported for other electron-doped transition-metal dichalcogenides. Cr-doped crystals suffer a compressive strain, resulting in an isotropic lattice contraction and an anisotropic optical bandgap energy shift (25 meV in-plane and 80 meV out-of-plane).

We observed the field electron emission of the technologically useful current density of 10 mA/cm 2 at an extremely low threshold electric field (E th ) of 1.0 V/mm, from an array of pillars of aligned carbon nanotube bundles, which were grown on a Si substrate by thermal chemical vapor deposition. Adjusting the distance between the neighboring pillars (R) and the pillar height (H) to the optimal condition (R=H ¼ 2) can effectually enhance the field concentration, resulting in a highly efficient electron emission. The obtained E th is 1/2-1/3 times lower than the best values that have been reported to date.

No abstract