“…CNTs of lower density are grown using thinner catalyst films. [7][8][9] Delzeit et al demonstrated that the density of the single walled nanotubes (SWNTs) can be controlled from sparsely distributed individual tubes to mats of SWNT ropes by controlling the thicknesses of the Fe and Mo cocatalysts on the Al underlayer. 10) In this paper, we report a new method of controlling the density of long CNTs in thick mats of more than 20 -50 mm in thickness.…”
Isolated hydrogen and muonium in crystalline silicon have been studied by the path-integral Monte Carlo method, using a parametrized Si-H interaction derived from earlier ab initio calculations. Hydrogen and deuterium are found to be stable at the bond-centre (BC) site, but this position is metastable for muonium. Average values of the kinetic and potential energy of the defects are compared with those expected for the hydrogen-like impurities within a harmonic approximation. The backwards relaxation of the Si-atom nearest neighbours of the impurity is found to be dependent on the impurity mass (higher host-atom relaxation for higher impurity mass).
“…CNTs of lower density are grown using thinner catalyst films. [7][8][9] Delzeit et al demonstrated that the density of the single walled nanotubes (SWNTs) can be controlled from sparsely distributed individual tubes to mats of SWNT ropes by controlling the thicknesses of the Fe and Mo cocatalysts on the Al underlayer. 10) In this paper, we report a new method of controlling the density of long CNTs in thick mats of more than 20 -50 mm in thickness.…”
Isolated hydrogen and muonium in crystalline silicon have been studied by the path-integral Monte Carlo method, using a parametrized Si-H interaction derived from earlier ab initio calculations. Hydrogen and deuterium are found to be stable at the bond-centre (BC) site, but this position is metastable for muonium. Average values of the kinetic and potential energy of the defects are compared with those expected for the hydrogen-like impurities within a harmonic approximation. The backwards relaxation of the Si-atom nearest neighbours of the impurity is found to be dependent on the impurity mass (higher host-atom relaxation for higher impurity mass).
“…The depth profiles of the atomic composition of asdeposited CuNi catalysts were analyzed by XPS combined with Ar etching. Our thermal-CVD apparatus 3,13) consisted of a quartz reactor and an electric furnace. C 2 H 2 gas diluted in He (C 2 H 2 /He ¼ 3=12 sccm) was introduced into the quartz reactor held at the desired growth temperature for 30 min and a deposition pressure of 1 Â 10 3 Pa. Before deposition, each substrate was kept in the reactor chamber at a base pressure below 5 Â 10 À2 Pa for 1 h in order to form nanosized catalyst particles.…”
Thermal-CVD was carried out for the low-temperature growth of carbon nanofibers (CNFs) using a CuNi alloy catalyst film with a thickness of 5 nm on Si in a gas mixture of C2H2 and He (C2H2/He=3/12 sccm). The experimental results obtained using the CuNi alloy catalyst film were compared with those obtained using the Fe, Ni, and FeNi catalyst films with the same thickness of 5 nm. It was shown that an amorphous CNF with a diameter of 20 nm can be grown even at 400 °C using the CuNi catalyst film, but not using the Fe, Ni and FeNi catalysts. A reduction in the growth temperature of CNFs was considered to be achieved using small CuNi catalyst particles with a comparatively smaller surface energy than FeNi catalyst particles.
“…Thus far, various applications in devices using CNTs as field emitters have been proposed, such as those in field-emission displays 3,4) and backlighting for liquid crystal displays. 5) From the viewpoint of the practical use of CNTs as field emitters, it is indispensable to satisfy not only a low threshold electric field (E th ) [6][7][8] but also field-emission uniformity. Therefore, screen printing has been regarded as one of the most promising methods of fabricating CNT field emitters at a low cost and on a mass production scale.…”
We investigated the effect of electrical aging on field electron emission from a screen-printed carbon nanotube (CNT) film. After maintaining the field-emission current density at 20 mA/cm2 for 3 h in the DC mode, it was observed that initially long CNTs became short and initially lying CNTs stood up. As a result, the field-emission uniformity and lifetime were markedly improved. From the analysis of the corresponding Fowler–Nordheim plots using a temperature-dependent formula, the shortening of CNTs by electrical aging was found to originate from the thermal evaporation of carbon atoms at the tip of CNTs during field electron emission.
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