Eco‐friendly and low‐cost cellulose nanofiber paper (nanopaper) is a promising candidate as a novel substrate for flexible electron device applications. Here, a thin transparent nanopaper‐based high‐mobility organic thin‐film transistor (OTFT) array is demonstrated for the first time. Nanopaper made from only native wood cellulose nanofibers has excellent thermal stability (>180 °C) and chemical durability, and a low coefficient of thermal expansion (CTE: 5–10 ppm K‐1). These features make it possible to build an OTFT array on nanopaper using a similar process to that for an array on conventional glass. A short‐channel bottom‐contact OTFT is successfully fabricated on the nanopaper by a lithographic and solution‐based process. Owing to the smoothness of the cast‐coated nanopaper surface, a solution processed organic semiconductor film on the nanopaper comprises large crystalline domains with a size of approximately 50–100 μm, and the corresponding TFT exhibits a high hole mobility of up to 1 cm2V‐1 s‐1 and a small hysteresis of below 0.1 V under ambient conditions. The nanopaper‐based OTFT also had excellent flexibility and can be formed into an arbitrary shape. These combined technologies of low‐cost and eco‐friendly paper substrates and solution‐based organic TFTs are promising for use in future flexible electronics application such as flexible displays and sensors.
Experiment and simulation of the compositional evolution of Ti-B thin films deposited by sputtering of a compound target Deposition of vanadium carbide thin films using compound target sputtering and their field emission
Articles you may be interested inGeneric trend of work functions in transition-metal carbides and nitrides Influence of the negative oxygen ions on the structure evolution of transition metal oxide thin films A systematic density functional theory study of the electronic structure of bulk and (001) surface of transitionmetals carbides Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices Rev.Work functions of transition metal nitride and carbide thin films were measured. The materials investigated were ZrN, NbN, HfN, TaN, HfC, and TaC. The films were prepared either by radio-frequency magnetron sputter deposition or by ion beam assisted deposition. The work function was measured by Kelvin probe in air. The work functions of ZrN and HfN ranged between 4.6 and 4.7 eV, and were similar to or slightly lower than that of NbN and TaN, 4.7 or 4.8 eV. The work function of TaC was approximately 5.0 eV. The higher work function of carbide may be attributed to lower electronegativity of carbon as compared to nitrogen.
Metal oxide TFT fabrication based on a solution-processing method is considered a promising alternative to conventional vacuum processing and has a number of advantages such as low cost, large-area fabrication, and process simplicity. A simple and reliable, direct patterning method for obtaining a carbon-free aqueous metal oxide film is presented herein. Patterning, which is achieved by selective photoreaction of water molecules under ultraviolet irradiation and by a safe, environment-friendly chemical etching process using a non-toxic organic acid, is followed by an annealing process at a temperature of 350 °C to obtain carbon-free metal oxide TFTs. In–Ga–Zn oxide (IGZO), TFTs on SiO2 dielectrics that were fabricated with a direct patterning method exhibited an average mobility of 4.3 cm2/V·s with good uniformity, which is comparable to TFTs formed by conventional photolithography. The TFTs exhibited stable performance with small (within 0.5 V) shifts in switch-on voltage under positive and negative bias stress. Fabrication of flexible IGZO TFTs by direct patterning was also achieved.
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