Relationship between Effective Work Functions and Noise    Powers  of Emission Currents in Nickel-Deposited Field Emitters

Gotoh, Yasuhito; Nagao, Masayoshi; Matsubara, Motoki; Inoue, Kazuaki; Tsuji, Hiroshi; Ishikawa, Junzo

doi:10.1143/jjap.35.l1297

Cited by 48 publications

(28 citation statements)

References 11 publications

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“…10 Using this chart, we have reported an empirical relation between and normalized noise power P N of the nickel deposited field emitters. 2 In this article, we report that this relation is seen for various kinds of emitters.…”

Section: Introductionmentioning

confidence: 75%

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Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Gotoh¹,

Tsuji²,

Ishikawa³

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The relation between the work function and current fluctuation was investigated for various kinds of emitters: element metals, transition metal nitrides, and diamonds. Since these deposited emitters have no good standard, it is difficult to distinguish the effect of work function and the other physical parameters such as apex radius. In order to distinguish these effects, we propose a unique technique of the SK chart and plotting the Fowler–Nordheim characteristics in the SK chart in accordance with the magnitude of the noise power: SKN plot. The SKN plot clearly exhibits the relation between physical parameters and current fluctuation and it was found that the emitter with lower work function shows lower current fluctuation.

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Section: Introductionmentioning

confidence: 75%

“…2 However, this equation underestimates the strong correlation between P N and . Furthermore, the current fluctuation is not governed by only but also depends upon the apex radius.…”

Section: Discussionmentioning

confidence: 98%

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Gotoh¹,

Tsuji²,

Ishikawa³

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…However, previous reports suggest that the former procedure does not always give reliable results. 20,21 Therefore, in this paper we used the ordinate at the origin to calculate the relationship / ¼ /ðbÞ, where / is given by:…”

Section: Methodsmentioning

confidence: 99%

Effect of O2+, H2++ O2+, and N2++ O2+ ion-beam irradiation on the field emission properties of carbon nanotubes

Acuña

Escobar

Goyanes³

et al. 2011

Journal of Applied Physics

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The effect of O2+, H2++ O2+, and N2++ O2+ ion-beam irradiation of carbon nanotubes (CNTs) films on the chemical and electronic properties of the material is reported. The CNTs were grown by the chemical vapor deposition technique (CVD) on silicon TiN coated substrates previously decorated with Ni particles. The Ni decoration and TiN coating were successively deposited by ion-beam assisted deposition (IBAD) and afterwards the nanotubes were grown. The whole deposition procedure was performed in situ as well as the study of the effect of ion-beam irradiation on the CNTs by x-ray photoelectron spectroscopy (XPS). Raman scattering, field-effect emission gun scanning electron microscopy (FEG-SEM), and field emission (FE) measurements were performed ex situ. The experimental data show that: (a) the presence of either H2+ or N2+ ions in the irradiation beam determines the oxygen concentration remaining in the samples as well as the studied structural characteristics; (b) due to the experimental conditions used in the study, no morphological changes have been observed after irradiation of the CNTs; (c) the FE experiments indicate that the electron emission from the CNTs follows the Fowler-Nordheim model, and it is dependent on the oxygen concentration remaining in the samples; and (d) in association with FE results, the XPS data suggest that the formation of terminal quinone groups decreases the CNTs work function of the material.

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“…Ishikawa et al proposed a unique evaluation method using the intercept and slope of a Fowler-Nordheim plot based on a semiempirical understanding [25,26]; this is called an S-K chart, named after the Japanese words 'seppen' and 'katamuki' which respectively mean intercept and slope. Figure 5 shows a typical example of an S-K chart obtained from a Spindt-type Ni single-field emitter.…”

Section: S-k Chartmentioning

confidence: 99%

Cathode technologies for field emission displays

Nagao

2006

IEEJ Transactions Elec Engng

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Technologies for the cathode substrate side of field emission displays (FEDs) are briefly described. In addition to electron emitter technologies, evaluation techniques and ways to improve the emission of field emitters are described in detail because these technologies are important for developing practical applications. FEDs will be commercially available within one or two years, and therefore the next generation FEDs beyond these are discussed. © 2006 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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Relationship between Effective Work Functions and Noise Powers of Emission Currents in Nickel-Deposited Field Emitters

Abstract: This note describes an a x . conipa,rator circuit \.vliich uses a Hall generator for nieasurement of d.c. magnetic fields. The accuracy is to I?/, between 1 80 and 12030 gauss.

Cited by 48 publications

References 11 publications

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Effect of O2+, H2++ O2+, and N2++ O2+ ion-beam irradiation on the field emission properties of carbon nanotubes

Cathode technologies for field emission displays

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