Cathode technologies for field emission displays

Nagao, Masayoshi

doi:10.1002/tee.20034

Cited by 6 publications

(1 citation statement)

References 42 publications

(39 reference statements)

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“…Because of the possible presence of organic residue or dust particles on the emitter surface during FED fabrication, a surface-cleaning aging process 14) was used to eliminate these impurities and to strengthen the emitter structure, which made the field emission mechanism more stable. Figures 3(a) and 3(b) show the I-V plots of the FEDs with the fabricated insulator layer thicknesses of 1, 2, and 3 m and etching times of 15 and 18 min, respectively.…”

Section: Resultsmentioning

confidence: 99%

Improvement of Electrostatic Discharge Protection by Introducing a Spindt-Type Silicon Field Emission Device

Chang

Ferng

Liao

et al. 2012

Jpn. J. Appl. Phys.

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In this paper, an original Spindt-type silicon field emission device (FED) with electrostatic discharge (ESD) regulation capability is proposed. The fabricated FED characteristics, including process parameters, capacitance-voltage (C-V ), current-voltage (I-V ), and frequency response, are investigated. To verify its capability of ESD protection, we replace the metal oxide varistor (MOV) in a state-of-the-art protection configuration with the fabricated FED under the application conditions of system-level ESD tests. The measured results show that the proposed ESD protection circuit composed of a prestage gas arrestor, an intermediate resistor, and an introduced FED can suppress an injected ESD pulse voltage of 6000 to 3193 V, a reduction of 46.8%, whereas suppression is to 5606 V, a reduction of 6.57%, when using only a gas arrestor.

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Section: Resultsmentioning

confidence: 99%