Work function measurement of transition metal nitride and carbide thin films

Fujii, Ryo; Gotoh, Yasuhito; Liao, Meiyong; Tsuji, Hiroshi; Ishikawa, Junzo

doi:10.1016/j.vacuum.2005.11.030

Cited by 63 publications

(43 citation statements)

References 10 publications

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“…Liao et al [11] fabricated field emitters by depositing a-CN x film on ZnO nanowires and this structure showed a good electron emission property. HfN x has good electrical conductivity and relatively low work function [12], which makes it potential in ideal field emitter [13]. Here, we report the synthesis of vertically well-aligned single crystal ZnO nanorod arrays and their field emission properties after being coated with HfN x films.…”

Section: Introductionmentioning

confidence: 99%

Field emission enhancement of ZnO nanorod arrays with hafnium nitride coating

Yuan

Fang

Chun

et al. 2008

Surface and Coatings Technology

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Section: Introductionmentioning

confidence: 99%

Field emission enhancement of ZnO nanorod arrays with hafnium nitride coating

Yuan

Fang

Chun

et al. 2008

Surface and Coatings Technology

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“…Several materials have been investigated as alternative gate electrodes, including TaN and NbN. [48][49][50] In order to replace polysilicon in CMOS transistors, a new metal gate electrode material should be highly conductive and show the correct work function for both nFET and pFET devices. For pFET a work function of 5.15 eV needs to be achieved in order to meet the requirements as a gate electrode.…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…[51] Up to now, however, very little is known about the use of MOCVDgrown niobium nitride thin films as a gate electrode material. [48][49][50] In this work, we report the first data on a NbN/SiO 2 /p-Si gate stack fabricated using the MOCVD of niobium nitride from TBTDEN/ammonia. The specific resistivities of the TS1-TS6 films were preliminarily probed by four point measurements.…”

Section: Electrical Characterizationmentioning

confidence: 99%

Deposition of Niobium Nitride Thin Films from Tert‐Butylamido‐Tris‐(Diethylamido)‐Niobium by a Modified Industrial MOCVD Reactor

Thiede

Parala

Reuter

et al. 2009

Chemical Vapor Deposition

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Niobium nitride thin films are deposited on 2 00 silicon (100) wafers using a modified industrial metal-organic (MO) CVD reactor of the type AIX-200RF, starting from tert-butylamido-tris-(diethylamido)-niobium (TBTDEN) and ammonia. Films of thicknesses 50-200 nm are deposited at temperatures ranging from 400 8C to 800 8C under reactor pressures of 1 and 5 mbar using various ammonia flow rates, and are characterized by the use of complementary techniques, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), secondary neutral mass spectrometry (SNMS), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), and electrical measurements. Films deposited above 450 8C consist of the cubic d-NbN phase, apart from the presence of Nb-O and Nb-O-N species predominantly in the outermost film regions. The lowest specific resistivities, determined by four point probe measurements, are in the range 500-600 mV cm. A NbN/SiO 2 /p-Si gate stack is fabricated using the grown niobium nitride films. From the capacitance-voltage (C-V)-curves, flatband voltages are extracted which, when plotted against SiO 2 -insulator thickness, yield a work function of 4.72 eV for asdeposited films.

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“…The LUMO and HOMO energy levels of perylene diimide derivatives make them particularly suitable for such applications, with values ranging from À 3.8 to À 4.2 eV and from À 5.8 to À 6.1 eV, respectively [9,10]. As the work function of many carbides is between À 4.7 and À 5.2 eV [11], novel charge transfer composites can be designed using OH-Ti 3 C 2 as the electron acceptor and perylene diimide derivatives as the electron donors.…”

Section: Introductionmentioning

confidence: 99%