Simple and reliable direct patterning method for carbon-free solution-processed metal oxide TFTs

Miyakawa, Masashi; Nakata, Masaya; Tsuji, Hiroshi; Fujisaki, Yoshihide

doi:10.1038/s41598-018-31134-w

Cited by 30 publications

(32 citation statements)

References 42 publications

(28 reference statements)

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“…The kinds of materials that were successfully processed with the help of DUV irradiation include all those that are required to form metal‐oxide TFTs, i.e., semiconductors, dielectrics, and conductors. Among them, the most commonly employed n‐type semiconductors are IGZO, IZO, zinc tin oxide (ZTO), as well as the binary compounds ZnO, In 2 O 3 , and GaO x . For p‐type oxides, there are far fewer studies available, with Cu 2 O being one of the exceptions …”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…Schematic depiction of the processing steps used to pattern the metal‐oxide films using either conventional photolithography (top), direct photonic patterning via solubility contrast (middle) (Adapted under the terms of the Creative Commons Attribution 4.0 International License . Copyright 2018, The Author(s).…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…To date, two different approaches that rely on the use of DUV to pattern solution‐processed metal‐oxide films have been reported (Figure 4): i)Direct light patterning through solubility contra‐st: Here, exposure of the precursor layer to DUV irradiation is altering the solubility of the film in the exposed areas due to partial photoconversion of the precursor to an MOM network. Following a few minutes of exposure through a shadow mask, the unexposed areas of the precursor film remain soluble and can be dissolved/etched using common solvents or dilute etchant solutions. ii)Patterning through surface wetting contrast: Substrate exposure to DUV increases the surface energy as compared to nonexposed areas.…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

“…The performance improvements were attributed to the reduced concentration of residual impurities within the oxide layers due to the absence of the photosensitizer. Similar, carbon‐free DUV patterned IGZO transistors were produced by Miyakawa et al through the use of water as the solvent in combination with a nitrate‐based precursor . Following layer deposition via spin‐coating, the solid precursor films were only dried at 60 °C prior to the DUV irradiation.…”

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

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Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

Section: Photochemical Conversion Of Metal‐oxide Precursors Via Deep mentioning

confidence: 99%

See 2 more Smart Citations

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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“…Several methods of low-temperature processes have been studied such as solution processing of oxide TFTs, which has attracted both industrial and academic interest [108][109][110][111][112][113][114][115][116][117][118][119]. Compared to the sputtering processing, employing solution processing in fabrication of TFTs could not only avoid using the expensive equipments, but also be compatible with ink-jet printing and roll-to-roll processes, which can significantly reduce the cost [120][121][122][123][124][125][126][127][128][129][130][131]. Hence, research work engaging in the oxide-based TFTs' technology is focusing on all aspects of TFTs to obtain better-performance devices, including materials, structures, processes, stabilities and mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

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Photon‐Pen Writing for Metal Oxide‐Based Versatile Nanosensors

Bae

Kim

Jang

et al. 2022

Adv Funct Materials

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Low‐temperature processes and simplification of lithographic techniques are key challenges for the fabrication of solution‐processed metal oxide‐based nanodevices. Recent breakthroughs in location‐specific synthetic methodologies involving inkjet printing and photon‐activation routes have enabled lithography‐free and bottom‐up fabrication of such devices. However, a revolutionary strategy to resolve room‐temperature direct fabrication of metal oxide‐based materials still remains elusive. Here, a pertinent route enabling wafer‐scale, location‐specific direct‐writing, termed “photon‐pen writing (PPW),” of functional metal oxide‐based devices is proposed. Using PPW, fabrication of elaborate patterns of metal oxides is demonstrated through location‐specific dechlorination and subsequent oxidation via thermal energy transfer of a focused infrared laser in ambient environment. By tailoring process parameters, precise manipulation of the chemical and structural features of the PPW‐produced metal‐oxide patterns are demonstrated. The versatility of the PPW process by realizing a highly sensitive, stable, uniform, and wafer‐scale nanosensor array for gas and light detection using PPW‐ZnO channel and PPW‐ITO electrodes is demonstrated, with 4.1% of response at 50 ppb NO2 and 2.93 ± 0.23 µA of photocurrent for 0.76 mW cm−2, 254 nm UV light. A new route toward wafer‐scale production of bespoke nanosensor arrays onto single chip for next‐generation nanoelectronics is introduced.

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Simple and reliable direct patterning method for carbon-free solution-processed metal oxide TFTs

Cited by 30 publications

References 42 publications

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Research Progress on Flexible Oxide-Based Thin Film Transistors

Photon‐Pen Writing for Metal Oxide‐Based Versatile Nanosensors

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