We have fabricated a gated field emitter using a diamond-like carbon ͑DLC͒ film cathode. The process involved the deposition of DLC, insulator, and gate layers followed by backetching to expose a patterned DLC. We also simulated the emission behavior of the gated DLC cathode. The emission sites on the DLC film were simulated by multiple sharp points formed on the DLC surface. The electron trajectory and the emission current were studied as a function of structural parameters such as cathode height, oxide layer thickness, gate hole diameter, and focus electrode.

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IThere is a great effort to achieve electron emission from chemical vapor deposited (CVD) polycrystalline diamond film. This is because diamond possesses high chemical stability, extraordinary hardness, high thermal conductivity, high melting temperature, and low electron affinity [ll. In this report we present a method for fabricating a patterned diamond tip array. Selective deposition of CVD diamond film is an important technique in the fabrication of diamond electronic devices. We have used silicon oxide to block the lateral growth of diamond to selectively grow a diamond field emitter array.