Fabrication of patterned diamond field emitter tips using silicon oxide barrier

Abstract

IThere is a great effort to achieve electron emission from chemical vapor deposited (CVD) polycrystalline diamond film. This is because diamond possesses high chemical stability, extraordinary hardness, high thermal conductivity, high melting temperature, and low electron affinity [ll. In this report we present a method for fabricating a patterned diamond tip array. Selective deposition of CVD diamond film is an important technique in the fabrication of diamond electronic devices. We have used silicon oxide to block the lateral growth of diamond to selectively grow a diamond field emitter array.