We have coated the silicon field emission tips with diamond-like carbon (DLC). The array of tips was made of n-type silicon using conventional dry etch. Before DLC coating, the tips were bombarded with argon ion to clean the surface. We found that this bombardment improved the aspect ratio of the tips and the DLC adhesion to the silicon tips. The DLC film was coated using radio frequency plasma assisted-CVD using CgHg gas. Initially, the end of the tips was coated with ball-shape DLC. The current-voltage curve was measured in Torr pressure. The DLC-coated tips emitted current at lower onset voltage than as-prepared silicon tips.
Field emission from diamond-like-carbon (DLC) films grown on a silicon substrate has been investigated. The films were prepared using radio-frequency plasma-assisted chemical vapor deposition. A DLC film incorporated with nitrogen exhibited better emission characteristics. For both nitrogen-incorporated and pure DLC, electric arc between the film and anode drastically enhanced the emission current. Analysis showed that the arc induced the formation of silicon carbide and the change in the surface morphology. The possible mechanism of the enhanced emission is discussed.
A dense and thick lead zirconate titanate (PZT) epitaxial film was synthesized on a Ba(Ti 0.9 ,Zr 0.1 )O 3 (BZT) substrate via hydrothermal treatment. The PZT films showed an excellent in-plane alignment with the BZT substrate, and also the crystallinity of the films was strongly dependant on the hydrothermal synthesis condition. An epitaxial PZT film as thick as 4.6 microns could be obtained after three-time repetition of the hydrothermal treatment.
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