1998
DOI: 10.1116/1.589885
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Fabrication and simulation of a gated thin film emitter

Abstract: We have fabricated a gated field emitter using a diamond-like carbon ͑DLC͒ film cathode. The process involved the deposition of DLC, insulator, and gate layers followed by backetching to expose a patterned DLC. We also simulated the emission behavior of the gated DLC cathode. The emission sites on the DLC film were simulated by multiple sharp points formed on the DLC surface. The electron trajectory and the emission current were studied as a function of structural parameters such as cathode height, oxide layer… Show more

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Cited by 10 publications
(6 citation statements)
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“…The geometrical parameters with which we carried out the numerical calculations were the gate-oxide thickness hϭ1.5 m, the gate thickness d g ϭ0.2 m, the gate-anode distance d ga ϭ60 m, and the gatehole radius rϭ6 m, respectively, and the anode-bias voltage was set at V a ϭ500 V. Note that the electric field is larger near the cathode edge than at central area; the variation of ϳ16 and ϳ21 V/m was observed over the radial distance of 6 m at V g of 45 and 60 V, respectively. 7,8 However, these approaches make the triode-fabrication process a lot more complicated, and moreover, the problem of wide spreading of emitted electrons is not alleviated, which necessitates an extra electrode to focus emitted electrons. Consequently, the emission sites located near the edge of the planar cathode contribute most of the emission cur-a͒ Author to whom correspondence should be addressed; electronic mail: soonil@ajou.ac.kr.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…The geometrical parameters with which we carried out the numerical calculations were the gate-oxide thickness hϭ1.5 m, the gate thickness d g ϭ0.2 m, the gate-anode distance d ga ϭ60 m, and the gatehole radius rϭ6 m, respectively, and the anode-bias voltage was set at V a ϭ500 V. Note that the electric field is larger near the cathode edge than at central area; the variation of ϳ16 and ϳ21 V/m was observed over the radial distance of 6 m at V g of 45 and 60 V, respectively. 7,8 However, these approaches make the triode-fabrication process a lot more complicated, and moreover, the problem of wide spreading of emitted electrons is not alleviated, which necessitates an extra electrode to focus emitted electrons. Consequently, the emission sites located near the edge of the planar cathode contribute most of the emission cur-a͒ Author to whom correspondence should be addressed; electronic mail: soonil@ajou.ac.kr.…”
Section: Resultsmentioning
confidence: 99%
“…Electron emission from cathode surface and trajectories of field-emitted electrons were calculated using the Fowler-Nordheim field-emission equation 14 and the equation of motion, respectively. 7,8,15 Recently, we also succeeded in fabricating a triode emitter with the conventional structure using a CNP-film cathode. 10 Figure 1 shows the schematic structures of triode field emitters with planar cathodes, for which the simulations were carried out.…”
Section: Numerical Simulationmentioning
confidence: 99%
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“…[1][2][3][4] However, radial variation of the electric field on the planar cathode surface, which favors the electron emission near the gate edge, and wide spreading of the emitted electrons are inherent problems of the planar cathodes. [1][2][3][4] However, radial variation of the electric field on the planar cathode surface, which favors the electron emission near the gate edge, and wide spreading of the emitted electrons are inherent problems of the planar cathodes.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8] Carbon nanotubes emerged as one of the promising electron emitters due to its natural structure that could give large electric-field enhancement. Triode emitters with planar cathodes has become attractive in particular, because of the many advantages, including the substantial reduction in manufacturing cost, over tip-array cathodes.…”
Section: Introductionmentioning
confidence: 99%