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Closed-ampoule Zn diffusion in InP results in a net acceptor concentration that is much smaller than the Zn concentration. After subsequent annealing of InP in an atmosphere without Zn, the Zn and net acceptor concentrations have become almost identical, due to a decreased Zn concentration and an increased net acceptor concentration. The annealing treatment gives rise to a decreased contact resistivity. The diffusion depth has not changed. Annealing with a SiN cap on the InP surface does not have this effect on the concentrations. These annealing effects also take place in InGaAsP on InP layers. The results can be explained quantitatively by assuming that Zn is incorporated as both substitutional acceptors and interstitial donors and that only the interstitial Zn is driven out by the annealing, owing to its large diffusion coefficient. Profiles calculated with this interstitial-substitutional model can be fitted to experimental profiles assuming Zn to diffuse as singly ionized interstitial donors. This model can also describe earlier reported results on Zn diffusion in n-type InP for which a profile cutoff is found at a depth where the acceptor concentration equals the background donor concentration and in which the acceptor solubility is higher than in undoped InP.

The feasibility of volatile precursor low-pressure chemical vapor deposition (LPCVD) for the production of LiConormalO2 cathodes for all solid-state microbatteries was examined. To test this feasibility, and gain insight into the deposition behavior, the influence of the deposition parameters on the properties of LPCVD grown thin-film LiConormalO2 cathodes was systematically investigated. The deposition temperature, concentration of the various reactants, and duration of thin-film growth were varied. The resulting LiConormalO2 layers were subjected to X-ray diffraction, inductively coupled plasma–atomic emission spectrometry, Rutherford backscattering spectroscopy, and electrochemical analyses. Stoichiometry of the films could be controlled by varying the precursor flows. Samples deposited at high temperatures with the optimum stoichiometry showed a high crystallinity and a high electrochemical activity; a storage capacity corresponding to a reversible Li-content around the theoretical value of 0.55 per Co was reached, and a good cycling stability was obtained when using this electrode in combination with a solid-state electrolyte.

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Redox systems are particularly suitable for use as etching solutions for normalGaAs and Ga1−xAlxnormalAs . It is found that solutions with a certain composition andpH selectively etch normalGaAs with respect to Ga1−xAlxnormalAs and that other solutions containing the same chemicals but with a different composition and/orpH selectively etch Ga1−xAlxnormalAs with respect to normalGaAs . The same behavior is seen on normalGaP‐normalInGaP and normalGaP‐normalGaAlAs heterostructures. A survey of the redox systems studied and examples of the applications are given.

Abstract-A phased-array-based multiwavelength laser has been realized on a chip area of 3.5 x 2.5 mm2. The device has nine channels, spaced at 400 GHz around a central wavelength of 1.55 pm. Its performance is characterized by a minimum threshold current of 101 mA, a maximum fiber-coupled power of 0.37 mW, and a linewidth of 21 MHz. In addition, simultaneous four-channel operation is demonstrated.