Selective Etching of III‐V Compounds with Redox Systems

Tijburg, R. P.; Dongen, T. van

doi:10.1149/1.2132910

Cited by 35 publications

(19 citation statements)

References 2 publications

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“…This process can be represented by the following schematic reaction GaAs ~-3H202 + 6H + --> Ga + + + -t-As + + + ~ 6H20 [1] The nature of the resulting species depends on the pH and complexing power of the electrolyte 9 This is evidently the process by which chemical etching of the semiconductor proceeds at the rest potential. This process can be represented by the following schematic reaction GaAs ~-3H202 + 6H + --> Ga + + + -t-As + + + ~ 6H20 [1] The nature of the resulting species depends on the pH and complexing power of the electrolyte 9 This is evidently the process by which chemical etching of the semiconductor proceeds at the rest potential.…”

Section: Resultsmentioning

confidence: 99%

“…Electroless nickel plating from hypophosphite solutions proceeds spontaneously on many metal surfaces (1)(2)(3)(4)(5), although the specifics of this process may be of ,a different nature. Some noble metals (palladium, 1On leave from Institute of Physical Chemistry, 01-224 Warszawa, Poland. Key words: electroless, nickel plating, iron, nickel, nickel-phosphorus.…”

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confidence: 99%

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Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox System

Haroutiounian

Sandino

Cléchet

et al. 1984

J. Electrochem. Soc.

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Basic electrochemical processes at GaAs, GaAsP, and GaA1As electrodes were studied in H~O~ aqueous solutions at several pH values. An analytical automatic system, which directly plots gallium concentration vs. potential, allows the collection of information on corrosion processes. The approach of making continuous analysis of gallium ions, while dissolving the semiconductor at a preselected potential, was used in conjunction with impedance and ellipsometric measurements in order to study interfacial phenomena. On the basis of these results, a mechanism for chemical corrosion (etching) which involves electrons captured from semiconductor surface states by H202 was proposed. Anodic polarization can also induce corrosion by hole generation in the valence band or by avalanche breakdown. As expected, pH plays a fundamental role in the corrosion process through the solubility shift of the oxide layer. Further consideration is given to the effect of illumination, with special emphasis on p-type semiconductors, for which it can lead to an inhibition effect on corrosion via a current doubling mechanism. Finally, application of selective etching is described for GaAs, GaA1As, and GaAsP hetero structures.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.211.4.224 Downloaded on 2015-06-13 to IP ABSTRACT The catalytic activity for electrooxidation of hypophosphite and electroless nickel plating on iron, nickel, and electrolessly plated nickel (with 2.2-2.9 weight percent (w/o) p) was investigated in an ammoniacal solution ofpH 8.8 at 50~ by potential measurements and linear sweep voltammetry from -0.3V to 0.92Vvs. SCE. Cathodic polarization of any of the substrates (in 0.1M H2SO4) before testing or permeation of hydrogen throughiron foils during testing reduced the incuba-

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox System

Haroutiounian

Sandino

Cléchet

et al. 1984

J. Electrochem. Soc.

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“…As the flatband potential is shifted to more negative values, here again, in the presence of light, selective etching occurs. However, the poor selectivity will limit practical interest of such an etching, and One would prefer methods based on the shift of solubility limit of oxides with the composition (x) and to obtain selectivity varying with the pH (16).…”

Section: Layers Of Different Diffusion Lengths--selective Etchingmentioning

confidence: 99%

Interpretation of Selective Etching of III–V Compounds on the Basis of Semiconductor Electrochemistry

Hollan¹,

Tranchart²,

Memming³

1979

J. Electrochem. Soc.

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“…36 However, the use of these solutions in device fabrication is not preferred because of the non-selective behavior towards (Al)GaAs and InGaP or because of hazardous compositions. Therefore, in this study, the use of I 2 :KI was investigated to remove the GaP for the creation of the rear contact points, which reportedly 37 has an excellent selectivity towards InGaP at alkaline (pH > 9) reaction conditions.…”

Section: Wet-chemical Etching Of Gap With I 2 :Kimentioning

confidence: 99%

Ultrathin GaAs solar cells with a high surface roughness GaP layer for light‐trapping application

Woude

Krabben

Bauhuis

et al. 2022

Progress in Photovoltaics

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By reducing the thickness of the absorber layers, ultrathin GaAs solar cells can be fabricated in a more cost-effective manner using less source material and shorter deposition times. In this work, ultrathin GaAs solar cells are presented with a diffuse scattering layer based on wide bandgap GaP grown directly on the device layers of the cells with MOCVD. The roughness and surface morphology are quantified using atomic force microscopy and the resulting diffuse scattering capability is assessed using wavelength-dependent reflectance measurements. Ohmic rear contacts are made using contact points etched through the GaP layer, for which an etching procedure using I 2 :KI was developed and optimized. The performance of the GaP textured ultrathin GaAs cells are compared with equivalent planar cells using current densityvoltage measurements and external quantum efficiency measurements, where the GaP textured cells demonstrate an increase of 6.7% in the short-circuit current density (J SC ), which was found to be as high as 21.9 mAÁcm À2 as a result of increased photon absorption by light-trapping.

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Selective Etching of III‐V Compounds with Redox Systems

Cited by 35 publications

References 2 publications

Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox System

Electrochemical and Photoelectrochemical Behavior and Selective Etching of III–V Semiconductors in H 2 O 2 as Redox System

Interpretation of Selective Etching of III–V Compounds on the Basis of Semiconductor Electrochemistry

Ultrathin GaAs solar cells with a high surface roughness GaP layer for light‐trapping application

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