This paper presents some theoretical considerations to show that by etching in an enhanced acceleration field, such as can be obtained in a centrifuge, it is possible to circumvent many of the typical objectionable features of some of the traditional etching techniques. The theory is corroborated by a small series of experiments. These clearly indicate that centrifugal etching may yield very low undercutting, large etch rates, and, if proper care is taken, an extremely smooth surface finish.
The patchiness of contacts can be determined from measurements of 1/f noise and contact resistance on a number of contacts of different diameters made by the same method. If a contact consists of k conducting spots with average radius a, k and a can be determined if the distance between the spot centers is at least 2.5 times the spot diameter. Using the developed multispot contact model, the results of the 1/f noise analysis are in good agreement with multispot parameters obtained from microscopic investigations.
Redox systems are particularly suitable for use as etching solutions for
normalGaAs
and
Ga1−xAlxnormalAs
. It is found that solutions with a certain composition andpH selectively etch
normalGaAs
with respect to
Ga1−xAlxnormalAs
and that other solutions containing the same chemicals but with a different composition and/orpH selectively etch
Ga1−xAlxnormalAs
with respect to
normalGaAs
. The same behavior is seen on
normalGaP‐normalInGaP
and
normalGaP‐normalGaAlAs
heterostructures. A survey of the redox systems studied and examples of the applications are given.
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