High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

Thijs, P.J.A.; Tiemeijer, L.F.; Kuindersma, P.I.; Binsma, J.J.M.; Dongen, T. van

doi:10.1109/3.89960

Cited by 271 publications

(53 citation statements)

References 52 publications

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“…Long wavelength SOA based on InAs/InP Qdots active region has shown remarkable improvement in terms of performance characteristics compared to the Qwell based SOA [150][151][152], particularly broadband gain profile. This is attributed to the inhomogeneously broadened Qdots gain and the ultra-fast carrier capture process [153].…”

Section: Inas/inp Qdots Semiconductor Optical Amplifiersmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Inas/inp Qdots Semiconductor Optical Amplifiersmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…These are very promising materials for many technological applications like solar cells [1], long wavelength lasers [2], terahertz emitters [3], optical amplifiers [4], and temperatureinsensitive semiconductor band gap [5].…”

mentioning

confidence: 99%

Electrical properties of nitrogen‐related defects in n‐type GaAsN grown by molecular‐beam epitaxy

Shafi

Mari

Henini

et al. 2009

Phys. Status Solidi (c)

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Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS (LDLTS) techniques have been employed to characterize electron traps in dilute GaAsN epitaxial layers grown by Molecular Beam Epitaxy (MBE) on n+ GaAs substrates. The GaAsN samples used in this study were silicon doped (n‐type) and contained nitrogen concentrations ranging from 0.2% to 1.2%. The number of electron traps in each sample detected by the DLTS measurements is found to be dependent on the nitrogen contents. Some of the traps have been identified with previously reported (N‐As)spl split interstitial, nitrogen‐split interstitial, EL6‐like interfacial defect and EL3 defect levels. In a control sample without nitrogen we observed only one deep electron emitting level of energy 0.76 eV and no shallow levels have been seen. However, new shallow traps with energies ranging from 0.036 to 0.13 eV have been detected in samples with nitrogen content in the range 0.2% to 0.4%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…To my best knowledge, there are limited experimental results for spontaneous radiative recombination coefficient B and Auger recombination coefficient C for 1.3-lm InGaAsP-InP MQW lasers, the newly obtained experimental results in [8] are used: B ¼ ð0:698-0:737Þ Â 10 À10 cm 3 s À1 , C ¼ ð3:95-6:8Þ Â 10 À29 cm 6 s À1 at room temperature. Assuming the activation energy of Auger recombination coefficient DE to be 60 meV [5], and using the expression for N tr and effective masses for electrons and heavy holes in [9], N tr is calculated to be 7.46 · 10 17 cm 3 at 85°C, therefore the ratio of spontaneous radiative current to total recombination current is in the range of 0.443-0.591, resulting in an range of 169-197 K for the characteristic temperature of transparency current T 0 ðJ tr Þ at 85°C. The third term of (8) has been experimentally proved to be negligible [3,10], meantime it can be estimated theoretically.…”

Section: Summary Of Performances In 13-lm Ingaaspinp Mqw Lasersmentioning

confidence: 99%

Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP–InP quantum-well lasers

Jin

Tian

Shi

et al. 2004

Infrared Physics & Technology

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High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

Cited by 271 publications

References 52 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Electrical properties of nitrogen‐related defects in n‐type GaAsN grown by molecular‐beam epitaxy

Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP–InP quantum-well lasers

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