The state-selective dissociation dynamics for anionic and excited neutral fragments of gaseous SiCl 4 following Cl 2p and Si 2p core-level excitations were characterized by combining measurements of the photoninduced anionic dissociation, x-ray absorption and UV/visible dispersed fluorescence. The transitions of core electrons to high Rydberg states/doubly excited states in the vicinity of both Si 2p and Cl 2p ionization thresholds of gaseous SiCl 4 lead to a remarkably enhanced production of anionic, Si − and Cl − , fragments and excited neutral atomic, Si * , fragments. This enhancement via core-level excitation near the ionization threshold of gaseous SiCl 4 is explained in terms of the contributions from the Auger decay of doubly excited states, shake-modified resonant Auger decay, or/and post-collision interaction. These complementary results provide insight into the state-selective anionic and excited neutral fragmentation of gaseous molecules via core-level excitation.
We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. This technique should contribute to improve the device performance such as gate pitch scaling and low specific on-resistance.
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