The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles

Abstract

We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. This technique should contribute to improve the device performance such as gate pitch scaling and low specific on-resistance.

Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001)

“…As shown in Fig. 4, p 2 of 0.3 was found to reproduce well the R max reported by Linnarson et al, 28) Mochizuki et al, 26) Inoue et al, 29) and Wada et al 30) The resultant Eqs. ( 2) and (3) are as follows:…”

“…Our reproduction of the measured R max ranging from 0.6 (at E 0 = 60 keV) to 7.2 μm (at E 0 = 8 MeV) should contribute to realization of cost-effective multi-epitaxial growth for 4H-SiC superjunction devices. 0001) recently reported by Linnarsson et al 28) Inoue et al 29) and Wada et al 30) Maximum channeled range (R max ) is defined as the depth where concentration decreases to 10% of its channeled plateau concentration. 25)…”

“…1 has been found to disagree with the secondaryion mass spectrometry (SIMS) measured depth profiles of channeled-ion implantations of Al into 4H-SiC (0001) reported after 2021. [28][29][30] Figure 1 shows the reported SIMS profiles with channeled plateaus. [28][29][30] We determined the maximum channeled range (R max ) as the depth where the Al concentration decreases to 10% of the plateau concentration.…”

“…[28][29][30] Figure 1 shows the reported SIMS profiles with channeled plateaus. [28][29][30] We determined the maximum channeled range (R max ) as the depth where the Al concentration decreases to 10% of the plateau concentration. [25][26][27] As shown by the solid symbols in Fig.…”

“…1. (Color online) Secondary-ion mass spectrometry measured depth profiles of channeled-ion implantations of Al into 4H-SiC (0001) recently reported by Linnarsson et al28) Inoue et al29) and Wada et al30) Maximum channeled range (R max ) is defined as the depth where concentration decreases to 10% of its channeled plateau concentration 25).…”