We investigated the channeling implantation of dopant ions into 4H-SiC in detail. The advantages of channeling implantation were clarified by both experimental and Monte Carlo simulation. Extremely abrupt deep profile with box-like can be formed by channeling implantation of Al and P ions. In the case of B and N ions, retrograde-like profile can be obtained by channeling implantation. The unique dopant profile can be realized by channeling implantation. Both vertical and lateral straggling becomes small by using channeling implantation for Al ions. This technique should contribute to improve the device performance such as gate pitch scaling and low specific on-resistance.
A Bernas type ion source has been developed for Genus high energy ion implanters. The new source increases output by 50 YO and lifetime by 100 YO for boron applications, compared to the standard Genus PIG ion source. Up to 49 mA of total beam has been extracted from a BF, plasma through an aperture, 7.0 mm in diameter, and 14 mA of analyzed boron current ("B? has been obtained. This is equivalent to providing a 85 YO margin above the specified boron current for Genus 1510 implanters. In this paper, the source configuration, output performance and lifetime are presented.
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