Photo-voltage at the semiconductor surface has been investigated by using a new solution of Poisson-Boltzmann equation. Brattain and Bardeen modex for surface traps has been taken in the formulation. Dependence of normalised surface photo-voltage on surface potential under different carrier densities has been estimated and the results are presented graphically.
The surface photoeffect in a heavily doped semiconductor was investigated using the influences of band-gap narrowing and carrier degeneracy. Variation of the surface photovoltage with the normalized surface potential is presented graphically. A comparison with earlier work done under identical conditions is made. The temperature-dependent behaviour is also studied.
Surface photovoltage in a heavily doped high-low junction in equilibrium was investigated analytically taking into account the effects of band-gap narrowing. The dependence of the normalized surface photovoltage on surface potential for different values of the surface densities of states and also for various temperatures were studied. The results are shown graphically.Le photo-voltage de surface dans une jonction haut-bas fortement dopCe en Cquilibre a CtC CtudiC analytiquement, en tenant compte des effets de rCtrCcissement de la bande interdite. L'effet du potentiel de surface sur le photo-voltage de surface normalise a ete CtudiC, pour diffkrentes valeurs des densites superficielles d'Ctats, ainsi que pour differentes temperatures. Les risultats sont present& graphiquement.
A model for studying the characteristics of heavily doped n+-GaAs/n-Ge heterojunction structures is developed through the use of a Poisson-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with depth. The changes of carrier concentration with depth are also computed.
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