Studies on Photo-Effects in Semiconductor Surfaces

De, S. S.; Ghosh, Ajay; Pattanayak, T. K.; Pal, Prosenjit; Halder, Jadab Chandra; Chatterji, A. K.; Lahiri, Abhijit

doi:10.1143/jjap.28.187

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…Illumination-induced surface-potential variation in semiconductors gives rise to surface photovoltage. The expression of such surface photovoltage for a semiconductor surface may be derived through the use of the approximate solution of Poisson's equation (1,2). Recently, the use of high-low junctions was applied to the photovoltaic response in solar cells (3)(4)(5)(6).…”

Section: Introductionmentioning

confidence: 99%

Surface photovoltage in a heavily doped high–low junction in equilibrium

De¹,

Ghosh²,

Pattanayak³

1991

Can. J. Phys.

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Surface photovoltage in a heavily doped high-low junction in equilibrium was investigated analytically taking into account the effects of band-gap narrowing. The dependence of the normalized surface photovoltage on surface potential for different values of the surface densities of states and also for various temperatures were studied. The results are shown graphically.Le photo-voltage de surface dans une jonction haut-bas fortement dopCe en Cquilibre a CtC CtudiC analytiquement, en tenant compte des effets de rCtrCcissement de la bande interdite. L'effet du potentiel de surface sur le photo-voltage de surface normalise a ete CtudiC, pour diffkrentes valeurs des densites superficielles d'Ctats, ainsi que pour differentes temperatures. Les risultats sont present& graphiquement.

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Section: Introductionmentioning

confidence: 99%

Surface photovoltage in a heavily doped high–low junction in equilibrium

De¹,

Ghosh²,

Pattanayak³

1991

Can. J. Phys.

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Properties of Hydrophone with Porous Piezoelectric Ceramics

Arai¹,

Ayusawa²,

Sato³

et al. 1991

Jpn. J. Appl. Phys.

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We constructed a hydrophone using porous piezoelectric ceramics and conducted a detailed investigation into hydrophone sensitivity under higher pressure and its acceleration sensitivity as vibrational noise. At a pressure of 7.85 MPa, the hydrophone sensitivity of the porous piezoelectric ceramic hydrophone was some 20 dB higher than that of the piesoelectric ceramic hydrophones. The difference in acceleration sensitivity between the porous piezoelectric ceramics and the piezoelectric ceramics was extremely minor. The hydrophone sensitivity is sufficiently high to allow us to consider vibrational noise as negligible.

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Studies on Photo-Effects in Semiconductor Surfaces

Cited by 2 publications

References 11 publications

Surface photovoltage in a heavily doped high–low junction in equilibrium

Surface photovoltage in a heavily doped high–low junction in equilibrium

Properties of Hydrophone with Porous Piezoelectric Ceramics

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