Surface photovoltage in a heavily doped high–low junction in equilibrium

Abstract

Surface photovoltage in a heavily doped high-low junction in equilibrium was investigated analytically taking into account the effects of band-gap narrowing. The dependence of the normalized surface photovoltage on surface potential for different values of the surface densities of states and also for various temperatures were studied. The results are shown graphically.Le photo-voltage de surface dans une jonction haut-bas fortement dopCe en Cquilibre a CtC CtudiC analytiquement, en tenant compte des effets de rCtrCcissement de la bande interdite. L'effet du potentiel de surface sur le photo-voltage de surface normalise a ete CtudiC, pour diffkrentes valeurs des densites superficielles d'Ctats, ainsi que pour differentes temperatures. Les risultats sont present& graphiquement.