SYNOPSISFull and semi-IPNs were prepared from epoxy and poly methyl methacrylate (PMMA) , by the sequential mode of synthesis and were characterized by measurements of ultimate tensile strength ( U T S ) , elongation at break, modulus, and toughness. Aromatic polyamine adducts and ethylene glycol dimethacrylate were used as the crosslinkers for epoxy and comonomer/crosslinker for methyl methacrylate monomer, respectively. Higher UTS and modulus of the semi-IPNs over full IPNs were attributed to the higher probability of interpenetration. The weight retention in the thermal decomposition of the IPNs and semiIPNs were higher than the epoxy homopolymer. This enhancement was presumably related to the presence of the unzipped methyl methacrylate monomer which acted as radical scavangers in the epoxy degradation.
A model for studying the characteristics of heavily doped n+-GaAs/n-Ge heterojunction structures is developed through the use of a Poisson-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with depth. The changes of carrier concentration with depth are also computed.
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