A model is presented to investigate the variation of majority carrier density as a function of position for a forward-biased high-low junction. The model is developed in order to obtain a new approximate analytical solution of Poisson's equation for such a junction with a suficiently large doping difference between the two sides. A comparison of the present work with that of previous work is made through graphical analysis.Es wird ein Modell entwickelt, urn die Anderung der Majoritatsladungstragerdichte mit der Position an einem vorwartsgespannten Stufenubergang zu untersuchen. Es wird eine neue analytische Naherungslosung der Poissongleichung fur einen solchen Ubergang mit hinreichend grol3er Differenz zwischen den Dotierungen auf beiden Seiten des Ubergangs erhalten. Ein Vergleich der Ergebnisse mit fruheren Daten wird graphisch durchgefuhrt.
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