Studies on Some Characteristics of Heavily Doped n+-GaAs/n-Ge Heterojunction Structures

Abstract

A model for studying the characteristics of heavily doped n+-GaAs/n-Ge heterojunction structures is developed through the use of a Poisson-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with depth. The changes of carrier concentration with depth are also computed.