The objective of this study is to determine the extent of magnetostriction in spin valves. Spin valves were fabricated on a silicon substrate using dc magnetron sputter deposition techniques with the following structure: Ta5.0/NiFe5.0 or 10.0/Co1.0/Cu3.0/Co3.0/Ru0.6/Co2.0/FeMn10.0/Ta5.0, where the subscripts denote the layer thickness in nanometers. The Permalloy composition used in these studies was Ni80Fe20. Spin valves were created in a serpentine shape to maximize the total magnetostriction (ΔL/L) by increasing the device length per die area. Device widths of between 1 and 40 μm with lengths of 1000–40 000 μm were fabricated. Devices were subjected to an external magnetic field while a mechanical force was applied to the backside of the substrate. An increase in the anisotropy field Hk, is observed with increasing stress. This increase is observed for all devices tested but is more distinct for those containing the 5.0 nm Permalloy. Results show that maximum magnetostriction occurs abruptly at lower stress values for the 10.0 nm Permalloy while magnetostriction for the 5.0 nm Permalloy occurs gradually over a wider range of stress values. Magnetoresistance measurements also show an inverse relationship between applied stress and (ΔR/R) performance. Magnetostriction analysis becomes critical as both device complexity and integration levels increase.
This paper investigates the small-signal behavior of SO1 CMOS devices. The small signal parameters include: power gain, transconductance, input resistance, output resistance, input and output capacitance. These characteristics were compared to Bulk CMOS at RF frequencies above IOGHz. Analysis of these results, show great reduction in the negative impacts of both the parasitic S / D resistance and parasitic BJT floating-body effects on RF circuits at 1 OGHz regime.
IntroductionBy scaling MOSFET channel lengths to nearly a tenth micron, CMOS is rapidly becoming a serious option for many low-power, wireless RF applications that were previously considered to be the exclusive domain of more expensive SiGe BiCMOS and GaAs technologies. Affordable, handheld
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