Abstract:We have directly measured coherent high-frequency magnetization dynamics in ferromagnet films induced by a spin-polarized DC current. The precession frequency can be tuned over a range of several gigahertz, by varying the applied current. The frequencies of excitation also vary with applied field, resulting in a microwave oscillator that can be tuned from below 5 GHz to above 40 GHz. This novel method of inducing high-frequency dynamics yields oscillations having quality factors from 200 to 800. We compare our results with those from single-domain simulations of current-induced dynamics.PACs 75.75.+a, Contribution of NIST, an agency of the U.S. government, not subject to copyright

The spin torque effect that occurs in nanometre-scale magnetic multilayer devices can be used to generate steady-state microwave signals in response to a d.c. electrical current. This establishes a new functionality for magneto-electronic structures that are more commonly used as magnetic field sensors and magnetic memory elements. The microwave power emitted from a single spin torque nano-oscillator (STNO) is at present typically less than 1 nW. To achieve a more useful power level (on the order of microwatts), a device could consist of an array of phase coherent STNOs, in a manner analogous to arrays of Josephson junctions and larger semiconductor oscillators. Here we show that two STNOs in close proximity mutually phase-lock-that is, they synchronize, which is a general tendency of interacting nonlinear oscillator systems. The phase-locked state is distinct, characterized by a sudden narrowing of signal linewidth and an increase in power due to the coherence of the individual oscillators. Arrays of phase-locked STNOs could be used as nanometre-scale reference oscillators. Furthermore, phase control of array elements (phased array) could lead to nanometre-scale directional transmitters and receivers for wireless communications.

In a hybrid superconducting-magnetic device, two order parameters compete, with one type of order suppressing the other. Recent interest in ultra-low-power, high-density cryogenic memories has spurred new efforts to simultaneously exploit superconducting and magnetic properties so as to create novel switching elements having these two competing orders. Here we describe a reconfigurable two-layer magnetic spin valve integrated within a Josephson junction. Our measurements separate the suppression in the superconducting coupling due to the exchange field in the magnetic layers, which causes depairing of the supercurrent, from the suppression due to the stray magnetic field. The exchange field suppression of the superconducting order parameter is a tunable and switchable behaviour that is also scalable to nanometer device dimensions. These devices demonstrate non-volatile, size-independent switching of Josephson coupling, in magnitude as well as phase, and they may enable practical nanoscale superconducting memory devices.

We have directly measured phase locking of spin transfer oscillators to an injected ac current. The oscillators lock to signals up to several hundred megahertz away from their natural oscillation frequencies, depending on the relative strength of the input. As the dc current varies over the locking range, time-domain measurements show that the phase of the spin transfer oscillations varies over a range of approximately +/-90 degrees relative to the input. This is in good agreement with general theoretical analysis of injection locking of nonlinear oscillators.

We have measured microwave frequency, current-driven magnetization dynamics in point contacts made to Co 90 Fe 10 /Cu/ Ni 80 Fe 20 spin valves as a function of applied field strength and angle relative to the film plane. As the field direction is varied from parallel to nearly perpendicular, the device power output increases by roughly two orders of magnitude while the frequencies of the excitations decrease. For intermediate angles the excited frequency does not monotonically vary with applied current and also exhibits abrupt, current-dependent jumps. For certain ranges of current, and applied field strength and direction, the excitation linewidths decrease to a few megahertz, leading to quality factors over 18,000.