We have developed an excellent fabrication method for a Si single-electron field effect transistor memory device having a self-aligned floating dot gate. This device demonstrates single electron memory operation at room temperature. The ability to precisely control the size and position of the floating dot gate and the channel indicates the feasibility of practical single-electron memory.
This letter reports on a simple technique for fabricating Sn nanocrystals in thin SiO2 film using low-energy ion implantation followed by thermal annealing. These Sn nanocrystals have excellent size uniformity and position controllability. Their average diameter is 4.8 nm with a standard deviation of 1.0 nm. Most of the Sn nanocrystals reside at the same depth. The lateral edge-to-edge spacing between neighboring Sn nanocrystals is fairly constant: about 3 nm. A narrow as-implanted ion distribution profile and the effect of the SiO2–Si interface are considered to contribute to the size uniformity and position controllability. The features of these nanocrystals will open up new possibilities for novel devices.
We report the quantum dot infrared photodetector using the modulation doped
InAs self-assembled
quantum dots. By modulation doping, it is possible to remove the effect of
the dopants on the energy
level in InAs dots and to attribute clearly the infrared photocurrent to the carrier excitation in InAs
dots. The infrared photocurrent in the detector was clearly observed up to
30 K. The peak energy
and the polarization dependence of the infrared photocurrent are comparable
to the infrared electron
excitation from the ground state in InAs dots to the conduction band edge of
GaAs barriers.
We fabricated a Si single electron tunneling transistor which has a nanoscale floating dot gate stacked on a Coulomb island by a self-aligned process. This device exhibits drain current (Id) oscillations due to the Coulomb blockade effect and quantized threshold voltage (Vth) shifts resulting from a single electron tunneling from the channel to the floating dot gate. The high on/off current ratio of the Id oscillation combined with the quantized Vth shifts leads to the possibility of developing ultralow power consumption memory.
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