Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Nakajima, Akira; Futatsugi, T.; Kosemura, K.; Fukano, T.; Yokoyama, Naoki

doi:10.1063/1.118653

Cited by 156 publications

(70 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5,6 By contrast, polycrystalline silicon has been somewhat neglected for SET applications despite a greater flexibility of fabrication. Single-electron effects have been observed in devices using polysilicon, 7,8 but these rely on interlayer tunnelling rather than intrinsic polysilicon properties. Strong Coulomb blockade has also been reported at room temperature in a discontinuous ultrathin film of recrystallized amorphous silicon.…”

Section: ͓S0003-6951͑98͒02534-0͔mentioning

confidence: 99%

Single-electron effects in heavily doped polycrystalline silicon nanowires

Irvine

Durrani

Ahmed

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Section: ͓S0003-6951͑98͒02534-0͔mentioning

confidence: 99%

Single-electron effects in heavily doped polycrystalline silicon nanowires

Irvine

Durrani

Ahmed

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…As nanoscaled structures behave differently from their counterparts at macro-and microscales, a lot of methods have been developed to realize nanofabrication, such as X-ray lithography, electron beam lithography [1][2][3][4], nanoimprint lithography [5][6][7][8], focused ion beam (FIB) nanolithography [9,10], single atom manipulation [11], quantum dot self-assembly process [12][13][14] and so on.…”

Section: Introductionmentioning

confidence: 99%

Nanofabrication, effects and sensors based on micro-electro-mechanical systems technology

Wang

Yang

2013

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

In this paper, our investigation of nanofabrication, effects and sensors based on the traditional micro-electro-mechanical systems (MEMS) technology has been reviewed. Thanks to high selectivity in anisotropic etching and sacrificial layer processes, nanostructures such as nanobeams and nanowires have been fabricated in top-down batch process, in which beams with thickness of only 20 nm and nanowires whose width and thickness is only 20 nm were achieved. With the help of MEMS chip, the scale effect of Young's modulus in silicon has been studied and confirmed directly in a tensile experiment using electron microscopy. Because of their high surface-to-volume ratio and small size, silicon nanowire (SiNW)-based field-effect transistors (FETs) have been shown as one of the most promising electronic devices and ultrasensitive detectors in biological applications. We demonstrated that an SiNW–FET sensor can reveal ultrahigh sensitivity for rapid and reliable detection of 0.1 fM of target DNA with high specificity. All these indicate that the MEMS technology can pave the way to nanoapplications with its advantages of batch production, low cost and high performance.

show abstract

“…The organization of silicon nanocrystals has been a topic of interest in recent years due to their potential application for future large scale integration of nanoelectronic devices such as single electron transistors (SET) 1 and nonvolatile memories (NVM). 2 The fabrication of nanocrystals with excellent control over size, location and spacing remains a key requirement to obtain reproducible properties for these nanoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process

Ayari-Kanoun

Jaouad

Souifi

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that it is possible to use inductively coupled plasma etching systems in order to etch nanometric layers, despite the fact that these systems are designed for deep and fast etching. A stable process is developed for shallow etching of silicon nitride nanoholes. The influence of different plasma etching parameters on silicon nitride nanohole properties is analyzed. 30 nm deep nanoholes of approximately 30 nm diameter, near vertical sidewalls and a good control of the selectivity are achieved. The overall process provides a simple and reproducible approach based on shallow inductively coupled plasma etching to obtain high quality nanosized silicon nitride templates. A suitable process for organized arrays of 10 nm diameter silicon nanocrystals realized by electrochemical etching is shown.

show abstract

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Cited by 156 publications

References 2 publications

Single-electron effects in heavily doped polycrystalline silicon nanowires

Single-electron effects in heavily doped polycrystalline silicon nanowires

Nanofabrication, effects and sensors based on micro-electro-mechanical systems technology

Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process

Contact Info

Product

Resources

About