2013
DOI: 10.1098/rsta.2012.0315
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Nanofabrication, effects and sensors based on micro-electro-mechanical systems technology

Abstract: In this paper, our investigation of nanofabrication, effects and sensors based on the traditional micro-electro-mechanical systems (MEMS) technology has been reviewed. Thanks to high selectivity in anisotropic etching and sacrificial layer processes, nanostructures such as nanobeams and nanowires have been fabricated in top-down batch process, in which beams with thickness of only 20 nm and nanowires whose width and thickness is only 20 nm were achieved. With the help of MEMS chip, the scale effect of Young's … Show more

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Cited by 8 publications
(7 citation statements)
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“…Silicon nanowires (SiNWs) are a versatile functional material, widely studied and employed as, for example, solar cells [1][2][3][4][5], battery anodes [6,7], microelectromechanical systems (MEMS) [8], chemical and biosensors [9][10][11][12][13][14], thermoelectric harvesters [15][16][17], and transistors [18][19][20], due to changes in materials properties in the micro-and nanostructured size regime [21][22][23][24][25][26]. For transistors, SiNWs provide opportunity for gate-all-around structures, which improve the electrostatic control of the conduction channel, thereby enhancing performance and lowering power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon nanowires (SiNWs) are a versatile functional material, widely studied and employed as, for example, solar cells [1][2][3][4][5], battery anodes [6,7], microelectromechanical systems (MEMS) [8], chemical and biosensors [9][10][11][12][13][14], thermoelectric harvesters [15][16][17], and transistors [18][19][20], due to changes in materials properties in the micro-and nanostructured size regime [21][22][23][24][25][26]. For transistors, SiNWs provide opportunity for gate-all-around structures, which improve the electrostatic control of the conduction channel, thereby enhancing performance and lowering power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…For the 〈111〉 wafer, the parallelogram structure was formed by following the DRIE etch with a wet anisotropic potassium hydroxide (KOH) etch. The anisotropic nature of the etch converts the rectangular structure into a parallelogram crosssection with an angle of slope of 70.5°as defined by the crystalline planes [20]. The top view of the fabricated rectangular and parallelogram moulds are shown in figures 7(a) and (b), respectively.…”
Section: Fabricationmentioning
confidence: 99%
“…Individual nanotubes can be utilised to fabricate transistors and the connections between transistors in integrated circuits because of their capability to act as either metallic-or semi-conductors [80,81]. This is highly advantageous as the miniaturisation of conventional metal oxide semiconductors silicon transistors are fast approaching fundamental physical limits [82,83]. The potential implementation of CNTbased circuits affords the potential continued miniaturisation of transistor dimensions is an essential factor for improved integrated circuit performance and the potential implementation of CNT -based circuits [83].…”
Section: Introductionmentioning
confidence: 99%
“…This is highly advantageous as the miniaturisation of conventional metal oxide semiconductors silicon transistors are fast approaching fundamental physical limits [82,83]. The potential implementation of CNTbased circuits affords the potential continued miniaturisation of transistor dimensions is an essential factor for improved integrated circuit performance and the potential implementation of CNT -based circuits [83].…”
Section: Introductionmentioning
confidence: 99%