Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots

Horiguchi, N.; Futatsugi, T.; Nakata, Yoshihiro; Yokoyama, Naoki; Mankad, Tanaya; Petroff, P. M.

doi:10.1143/jjap.38.2559

Cited by 57 publications

(27 citation statements)

References 19 publications

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“…InAs quantum dots (QDs) embedded in GaAs quantum well structures have initiated considerable research activities in the recent years 1,2,3,4,5,6,7,8,9,10,11,12,13,14 . The interest in QDs is mainly based on the favorable energy spacing of their bound electronic states and the great potential to adjust these properties.…”

Section: Introductionmentioning

confidence: 99%

“…The IR photoresponse of InAs dots embedded in GaAs was investigated very recently 1,2,3,4,5,6,7,8,9 and transition energies between the dot ground state and the GaAs conduction band were found in the 100-400 meV range. Depending on the dot potential shape and the doping level, photodetection can even be extended into the region below 100 meV 21,22 .…”

Section: Introductionmentioning

confidence: 99%

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Intraband transitions in quantum dot–superlattice heterostructures

et al. 2005

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By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Intraband transitions in quantum dot–superlattice heterostructures

et al. 2005

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“…Different doping techniques, doping positions, and doping concentrations have been investigated to optimize QDIP performance [4,13,[44][45][46][47][48][49][50][51][52]. An important issue to be addressed is that QDIPs demonstrate higher dark currents, lower activation energies (minimum energy required for an electron to escape from QD), and lower operating temperatures than that predicted theoretically.…”

Section: Challenges Of Inas/gaas Qdips: Dopant Incorporationmentioning

confidence: 99%

Quantum-dot infrared photodetectors: a review

Stiff‐Roberts

2009

J. Nanophoton

100

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Abstract. Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be replaced by thermo-electric coolers. QDIPs are well-suited for detecting mid-IR light at elevated temperatures, an application that could prove to be the next commercial market for quantum dots. While quantum dot epitaxial growth and intraband absorption of IR radiation are well established, quantum dot nonuniformity remains as a significant challenge. Nonetheless, state-of-the-art mid-IR detection at 150 K has been demonstrated using 70-layer InAs/GaAs QDIPs, and QDIP focal plane arrays are approaching performance comparable to HgCdTe at 77 K. By addressing critical challenges inherent to epitaxial QD material systems (e.g., controlling dopant incorporation), exploring alternative QD systems (e.g., colloidal QDs), and using bandgap engineering to reduce dark current and enhance multi-spectral detection (e.g. resonant tunneling QDIPs), the performance and applicability of QDIPs will continue to improve.Keywords: InAs/GaAs quantum dots, colloidal quantum dots, quantum-dot infrared photodetectors, QDIP focal plane arrays.

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“…In contrast to the quantum well structure, the quantum dot does not have a selection rule like quantum wells and the quantum dot can detect light incident normally on the surface with the dots. Infrared detectors utilizing the self-grown dot of InAs have been developed (7) . The far infrared single photon detector was developed by using the quantum dot in which the electrons are confined by the micro electrodes (8) .…”

Section: Detectorsmentioning

confidence: 99%