An organic–inorganic hybrid superlattice with near perfect synergistic integration of organic and inorganic constituents was developed to produce properties vastly superior to those of either moiety alone. The complementary hybrid superlattice is composed of multiple quantum wells of 4-mercaptophenol organic monolayers and amorphous ZnO nanolayers. Within the superlattice, multichannel formation was demonstrated at the organic–inorganic interfaces to produce an excellent-performance field effect transistor exhibiting outstanding field-effect mobility with band-like transport and steep subthreshold swing. Furthermore, mutual stabilizations between organic monolayers and ZnO effectively reduced the performance degradation notorious in exclusively organic and ZnO transistors.

Herein, exfoliated, multilayered molybdenum disulfide (MoS2) (m‐MoS2) field‐effect transistors (FETs) are implemented with bilayered SiNx/SiOx gate dielectrics on indium tin oxide (ITO) substrates. For a quantitative understanding on gas adsorption effects on the electrical performance of m‐MoS2 FETs, subgap density of states (DOSs) in m‐MoS2 layers without (or with) hydrophobic polymer encapsulation are extracted using optical charge‐pumping capacitance–voltage spectroscopy. Based on extracted subgap DOSs and their deconvolution with analytical model of acceptor (or donor) like states, all electrical parameters are systematically analyzed. More importantly, two times increase in field‐effect mobility (μFE) is strongly related with decrease in shallow donor states (NSD) from 2 × 1018 to 2 × 1017 eV−1 cm−3. In addition, significant improvement of subthreshold swing (SS), hysteresis gap (VHYS) are attributed to the reduction of tail states (NTA) from 4 × 1019 to 2 × 1019 eV−1 cm−3, along with decrease in midgap states (NMid) from 3 × 1016 to 1.3 × 1016 eV−1 cm−3. For a final validation, technology computer‐aided design (TCAD) simulation with extracted DOS information nicely replicate measured I–V characteristics for m‐MoS2 FETs without (or with) encapsulation, indicating that extracted DOS information is quite accurate, compared with implemented m‐MoS2 FETs.

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Oxide semiconductor transistors control the brightness and color of organic light‐emitting diode (OLED) displays in large‐screen televisions to portable telecommunications devices. Oxide semiconductor thin‐film transistors under driving conditions are required to maintain a steady current through the OLED for constant illuminance. Interestingly, for driving conditions under strong saturation where both gate and drain bias are high, a boosting phenomenon of the drain current is discovered, even with compensation of the threshold voltage. In this paper, the current boosting effect of self‐aligned InGaZnO transistors under driving conditions is comprehensively investigated. Based on experimental extraction methods, two distinct regions within the device are identified: an electron‐capture‐dominant region including electron trapping in the gate insulator and O–O dimer bond‐breaking, and an electron‐emission‐dominant region caused by peroxide formation. A dual‐transistor‐in‐series model is proposed, where each region is modeled as a local transistor. The current boosting phenomena as a function of time are well‐reproduced for various channel length devices, which validate the accuracy of the model. Better understanding of the underlying mechanisms enables increased effectiveness of compensation schemes for transistors under long‐term current‐driving conditions.

Decomposition of the positive gate‐bias temperature stress (PBTS)‐induced instability into contributions of distinct mechanisms is experimentally demonstrated in top‐gate self‐aligned coplanar amorphous InGaZnO thin‐film transistors and validated by reproducing the PBTS time‐evolution of I‐V characteristics through the TCAD simulation into which the extracted density‐of‐states and charge trapping are incorporated.

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