Extraction Technique for Flat Band Voltage Using Multi-Frequency <i>C</i> – <i>V</i> Characteristics in Amorphous InGaZnO Thin-Film-Transistors

Choi, Sungju; Chae, Inseok; Park, Jingyu; Seo, Youngjin; Ryoo, Chang Il; Kim, Dong Myong; Park, Dong Wook; Kim, Dae Hwan

doi:10.1109/led.2020.3032442

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…Then, by using a multifrequency C – V measurement, we extracted the DOS values versus energy from the conduction band as shown in Figure d–f. The step-by-step procedure for calculating DOS values is shown in the Supporting Information. , As a result, the TFT placed on the third layer, which received the least heat throughout the procedure, exhibits a flat curve at the subgap region in DOS versus energy from the conduction band curve. On the other hand, the relative increase of DOS values was confirmed in the subgap region for the first and second layers of M3D TFTs.…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Joh,

Nam,

Jung

et al. 2023

ACS Appl. Mater. Interfaces

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In order to overcome the bottleneck between the central processor unit and memory as well as the issue of energy consumption, computing-in-memory (CIM) is becoming more popular as an alternative to the traditional von Neumann structure. However, as artificial intelligence advances, the networks require CIM devices to store billions of parameters in order to handle huge data traffic demands. Monolithic three-dimensional (M3D) stacked ferroelectric thin-film transistors (FeTFTs) are one of the promising techniques for realizing high-density CIM devices that can store billions of parameters. In particular, oxide channel-based FeTFTs are well suited for these applications due to low-temperature processes, nonvolatility, and 3D integration capability. Nevertheless, the M3D-integrated CIM devices including hafnia ferroelectric films need the high-temperature annealing process to crystallize the ferroelectric layer, making M3D integration difficult. When the FeTFTs are fabricated with an M3D structure, the high-temperature process causes thermal issues in the underlying devices. Here, we present the focused microwave annealed (FMA) oxide FeTFTs with M3D integration at a low temperature of 250 °C. We confirmed that the FeTFTs with metal–ferroelectric-metal–insulator–semiconductor structure exhibited a large memory window of 3.2 V, good endurance over 106 cycles, and a long retention time of 105 s. To understand the different electrical characteristics of FeTFTs in the top and bottom layers, we experimentally analyzed the density of the state of the oxide channel and ferroelectric properties of the ferroelectric gate insulator by using multifrequency capacitance–voltage measurement and nucleation-limited-switching model analysis, respectively. With our approach, we demonstrate for the first time a vertical stacked FeTFTs-based ternary-content-addressable memory (TCAM) cell for CIM application. We believe that the proposed M3D-stacked TCAM cells composed of FeTFTs can be used in high-density memory, energy-efficient memory, and CIM technology.

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Section: Resultsmentioning

confidence: 99%

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Joh,

Nam,

Jung

et al. 2023

ACS Appl. Mater. Interfaces

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“…The stable anticlockwise hysteresis under the DC sweep of the TFT indicated that there existed active ion movement in the dielectric layer driven by the applied electric field. 33,34 Another evidence of the ion movement in the dielectric layer was the flat band voltage ( V FB ) shift and slope change in the gate–source capacitance ( C GS ) measurements in the V GS sweep in the range of −5–5 V. 35,36 The schematic of the configuration and results of the C GS measurement are shown in Fig. S5 (ESI†).…”

Section: Results and Analysismentioning

confidence: 99%

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO_x gate dielectric

Chen

et al. 2022

Nanoscale

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Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors

Cited by 2 publications

References 19 publications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO_x gate dielectric

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Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors

Cited by 2 publications

References 19 publications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

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Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO_x gate dielectric