Experimental extraction of stern-layer capacitance in biosensor detection using silicon nanowire field-effect transistors

Choi, Sungju; Mo, Huaping; Kim, Jungmok; Kim, Seohyeon; Lee, Seung Min; Kim, Dong Myong; Park, Dong Wook; Kim, Dae Hwan

doi:10.1016/j.cap.2020.02.021

Cited by 13 publications

(10 citation statements)

References 28 publications

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“…The research on Stern and diffusion is of great importance to improve the accuracy of target molecule detection. A method of experimentally extracting the Stern layer capacitance (C stern ) of Si NWs ISFET has been proposed which improves the development of ISFET-based biosensors [ 80 ]. So far, the commonly used detection mechanism is based on the drift of threshold voltage (V TH ) or the change of NWs conductance when binding target biomolecules.…”

Section: Device Mechanismsmentioning

confidence: 99%

Novel Nanofluidic Cells Based on Nanowires and Nanotubes for Advanced Chemical and Bio-Sensing Applications

Zhu

Wang

et al. 2021

Nanomaterials

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Since the first introduction of one-dimensional nanochannels for single-molecule detection, there has been increasing interest in modern nanofluidic systems, such as chemical and biological sensing applications. Recently developed nanowires (NWs) and nanotubes (NTs) have received tremendous attention due to their unique geometrical, physical and chemical properties, which are very attractive in this field. Here, we review the recent research activities in the field of novel nanofluidic cells based on NWs and NTs. First, we give a brief introduction of this field. Then the common synthesis methods of NWs and NTs are summarized. After that, we discuss the working principle and sensing mechanism of nanofluidic devices, which is fundamental to the interaction between these nanostructures and small molecules. Finally, we present the NW- and NT-based devices for chemical and bio-sensing applications, such as gas sensing, pathogen detection, DNA sequencing, and so forth.

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Section: Device Mechanismsmentioning

confidence: 99%

Novel Nanofluidic Cells Based on Nanowires and Nanotubes for Advanced Chemical and Bio-Sensing Applications

Zhu

Wang

et al. 2021

Nanomaterials

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“…The dipole formation is simulated as formation of a very thin insulative electric double layer with permittivity of 2.25 [25,26]. The gas adsorption at the surface/interface is simulated through an effective change in the work-function of gate metal with respect to the concentration of gas reaching the surface.…”

Section: Device Parametersmentioning

confidence: 99%

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

2021

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Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides promises for detectors in hazardous environments. However, HEMT sensor resolution must be improved to develop high precision gas sensors for automotive and space applications. The proposed model aids in systematical study of the sensor performance and prediction of sensitivities. The linear relation of threshold voltage shift at thermal equilibrium is used in predicting the sensor response. Numerical model for the reaction rates and the electrical dipole at the adsorption sites at the surface and metal/semiconductor interface have been developed and the sensor performance is analyzed for various gas concentrations. The validation of the model has been achieved through surface and interfacial charge adsorption-based gate electrode work function, Schottky barrier, 2DEG and threshold voltage deduction using MATLAB and SILVACO ATLAS TCAD. Further the applicability of gd (channel conductance) as gas sensing metric is also presented. With high ID and gd percentile sensitivities of 118.5% and 92 % for 10 ppm hydrogen concentration. The sensor shows capability for detection in sub-ppm levels by exhibiting a response of 0.043% for 0.01ppm (10 ppb) hydrogen concentration. The detection limit of the sensor (1% sensitivity) presented here is 169 ppb and the device current increases by 34.2 μA for 1ppb hydrogen concentration.

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“…Silicon (Si) nano/microstructures fabricated by nano/micromachining have attracted much interest in applications of three-dimensional transistors, 1 nanoelectrics, 2 energy harvesting materials, 3 batteries, 4 highly sensitive sensors, 5,6 and metamaterials. 7 In particular, Si nano/micromachining through metal-assisted chemical etching (MACE) is regarded as an influential method due to its simplicity, low cost, high throughput, high crystalline quality, and applicability under ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Optimized Hole Injection, Diffusion, and Consumption for Efficient Metal-Assisted Chemical Etching Depending on the Silicon Doping Type and Metal Catalyst Area

Jang

2021

J. Phys. Chem. C

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Even though metal-assisted chemical etching (MACE) has been widely used for silicon (Si) nano/micromachining due to its low cost and high applicability, it is still difficult to fabricate elaborate Si nano/microstructures for high-value applications. In particular, further studies about effective factors in the MACE process with systematic approaches are highly required to obtain explicitly controlled MACE products. In this study, how the Si doping type and gold (Au) catalyst area influence MACE products in terms of the hole behavior during MACE is investigated. The type-dependent etching rate of MACE, amount of reaction products, and lateral etching/porosity of the MACE product are characterized with hole injection, diffusion, and consumption scenarios, respectively. Moreover, it is demonstrated that the dependence of the etching rate of MACE and stability/porosity of the MACE product on the Au catalyst area can be understood from the point of view of hole injection per interfacial contact plane area of the Au catalysts. As a result, elaborately controlled Si nano/microstructures can be obtained through an effective and accurate MACE process due to the optimized hole behavior. These findings could increase the accessibility and commercial availability of MACE products in many fields.

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Experimental extraction of stern-layer capacitance in biosensor detection using silicon nanowire field-effect transistors

Cited by 13 publications

References 28 publications

Novel Nanofluidic Cells Based on Nanowires and Nanotubes for Advanced Chemical and Bio-Sensing Applications

Novel Nanofluidic Cells Based on Nanowires and Nanotubes for Advanced Chemical and Bio-Sensing Applications

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

Optimized Hole Injection, Diffusion, and Consumption for Efficient Metal-Assisted Chemical Etching Depending on the Silicon Doping Type and Metal Catalyst Area

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