Optimized Hole Injection, Diffusion, and Consumption for Efficient Metal-Assisted Chemical Etching Depending on the Silicon Doping Type and Metal Catalyst Area

Jo, Jin Ho; Jang, Jae Won

doi:10.1021/acs.jpcc.1c04104

Cited by 9 publications

(3 citation statements)

References 34 publications

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“…This phenomenon occurs when the number of holes generated surpasses those consumed in the MACE process. [ 41,42 ] Figure 6d highlights that the tip of the Si nanocone is only ≈30 nm in diameter, significantly smaller than the hundreds of nanometers diameter of the initial Au NH array. Such sub‐50 nm sharp‐ended Si nanocone arrays are valuable for numerous applications.…”

Section: Resultsmentioning

confidence: 99%

Tip‐based Lithography with a Sacrificial Layer

Jo,

Lee,

Choi

et al. 2024

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The fabrication of a highly controlled gold (Au) nanohole (NH) array via tip‐based lithography is improved by incorporating a sacrificial layer—a tip‐crash buffer layer. This inclusion mitigates scratches during the nano‐indentation process by employing a 300 nm thick poly(methyl methacrylate) layer as a sacrificial layer on top of the Au film. Such a precaution ensures minimal scratches on the Au film, facilitating the creation of sub‐50 nm Au NHs with a 15 nm gap between the Au NHs. The precision of this method exceeds that of fabricating Au NHs without a sacrificial layer. Demonstrating its versatility, this Au NH array is utilized in two distinct applications: as a dry etching mask to form a molybdenum disulfide hole array and as a catalyst in metal‐assisted chemical etching, resulting in conical‐shaped silicon nanostructures. Additionally, a significant electric field is generated when Au nanoparticles (NPs) are placed within the Au NHs. This effect arises from coupling electromagnetic waves, concentrated by the Au NHs and amplified by the Au NPs. A notable result of this configuration is the enhancement factor of surface‐enhanced Raman scattering, which is an order of magnitude greater than that observed with just Au NHs and Au NPs alone.

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Section: Resultsmentioning

confidence: 99%

Tip‐based Lithography with a Sacrificial Layer

Jo,

Lee,

Choi

et al. 2024

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“…22 Effects of the doping type of Si on the metal-assisted etching behaver has also been studied through various approaches. [23][24][25][26][27][28][29][30] However, the difference of composite porous structures formed on n-Si and p-Si has not been discussed enough.…”

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confidence: 99%

“…In this context, the deposition of patterned metal films is reasonable way to control the interval between catalysts. Various kinds of Si structures have been fabricated by using patterned metal films, 23,26,27,30,[32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] but many reports have focused on the formation of high-aspect ratio structures.…”

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confidence: 99%

Metal-Assisted Etching of n-Type and p-Type Silicon Using Patterned Platinum Films: Spatial Distribution of Mesoporous Layer and Open Circuit Potential of Silicon

Matsumoto

Nishinaka

Shimada

et al. 2023

J. Electrochem. Soc.

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Platinum (Pt) is one of the interesting catalysts in metal-assisted etching (metal-assisted chemical etching) of silicon (Si). The Pt-assisted etching induces not only the dissolution of Si under the Pt catalysts but also the formation of mesoporous layer on the Si surface away from them. In this work, we etched n-Si and p-Si by using patterned Pt films with a diameter of 5 μm and an interval of 50 μm. For both cases, the Si surface under the Pt catalysts was selectively etched and macropores with a diameter of 5 μm were formed. The macropores formed on n-Si were deeper than those formed on p-Si. The mesoporous layer was observed only around the macropores on n-Si, while it was observed over the entire surface of p-Si. We also measured the open circuit potential of Si in the etching solution. The positive shift of potential of n-Si by the Pt deposition was smaller than that of p-Si except for the initial stage of etching, which can be explained by the polarization characteristics. We discussed the etching behavior of n-Si and p-Si on the basis of the results of structure observation and electrochemical measurements.

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Voltage‐ and Metal‐assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review

Surdo,

Barillaro

2024

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Sculpting silicon at the micro and nano scales has been game‐changing to mold bulk silicon properties and expand, in turn, applications of silicon beyond electronics, namely, in photonics, sensing, medicine, and mechanics, to cite a few. Voltage‐ and metal‐assisted chemical etching (ECE and MaCE, respectively) of silicon in acidic electrolytes have emerged over other micro and nanostructuring technologies thanks to their unique etching features. ECE and MaCE have enabled the fabrication of novel structures and devices not achievable otherwise, complementing those feasible with the deep reactive ion etching (DRIE) technology, the gold standard in silicon machining. Here, a comprehensive review of ECE and MaCE for silicon micro and nano machining is provided. The chemistry and physics ruling the dissolution of silicon are dissected and similarities and differences between ECE and MaCE are discussed showing that they are the two sides of the same coin. The processes governing the anisotropic etching of designed silicon micro and nanostructures are analyzed, and the modulation of etching profile over depth is discussed. The preparation of micro‐ and nanostructures with tailored optical, mechanical, and thermo(electrical) properties is then addressed, and their applications in photonics, (bio)sensing, (nano)medicine, and micromechanical systems are surveyed. Eventually, ECE and MaCE are benchmarked against DRIE, and future perspectives are highlighted.

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Optimized Hole Injection, Diffusion, and Consumption for Efficient Metal-Assisted Chemical Etching Depending on the Silicon Doping Type and Metal Catalyst Area

Cited by 9 publications

References 34 publications

Tip‐based Lithography with a Sacrificial Layer

Tip‐based Lithography with a Sacrificial Layer

Metal-Assisted Etching of n-Type and p-Type Silicon Using Patterned Platinum Films: Spatial Distribution of Mesoporous Layer and Open Circuit Potential of Silicon

Voltage‐ and Metal‐assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review

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