Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques

Lee, Heesung; Kim, Jae-Won; Choi, Sungju; Kim, Seong Kwang; Kim, Junyeap; Park, Jaewon; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong

doi:10.1109/led.2016.2636301

Cited by 4 publications

(1 citation statement)

References 11 publications

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“…Положения кривых I D − V G и C G − V G на оси напряжений затвора хорошо согласуются между собой в обоих состояниях устройства. Общий вид характеристик соответствует данным из литературы [4,5]. 10 -7…”

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Коррелированное изменение электрических характеристик тонкопленочного полевого транзистора при модификации физических свойств его оксидного полупроводникового канала (InZnO : N)

Черемисин¹,

Кулдин²

2018

Письма В Журнал Технической Физики

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We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage ( C _G– V _G) and transmission ( I _D– V _G) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the C _G– V _G and I _D– V _G curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.

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Коррелированное изменение электрических характеристик тонкопленочного полевого транзистора при модификации физических свойств его оксидного полупроводникового канала (InZnO : N)

Черемисин¹,

Кулдин²

2018

Письма В Журнал Технической Физики

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Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states

Nakazawa,

Matsuzaki,

Shimizu

et al. 2024

Journal of Applied Physics

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Illumination stress (IS) and negative bias under illumination stress (NBIS) cause considerable device instability in thin-film transistors based on amorphous In–Ga–Zn–O (a-IGZO). Models using in-gap states are suggested to explain device instability. Therefore, to provide reliably their density of states (DOS), this study investigated the valence band, conduction band, and in-gap states of an a-IGZO thin film. The DOS of in-gap states was directly determined in a dynamic range of six orders of magnitude through constant final state yield spectroscopy (CFS-YS) using low-energy and low-flux photons. Furthermore, light irradiation irreversibly induced extra in-gap states near the Fermi level and shifted the Fermi level to the vacuum level side, which should be related to the device instability due to IS and NBIS. Hard x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy using synchrotron radiation observed the large DOS of in-gap states near the Fermi level as in previous works. Here, we reveal that they are not intrinsic electronic states of undamaged a-IGZO, but induced by the intense measurement light of synchrotron radiation. This study demonstrates that CFS-YS is useful for determining the reliable DOS of the in-gap states for samples that are sensitive to light irradiation. The absorption spectrum measured through photothermal deflection spectroscopy is interpreted based on DOS directly determined via photoemission spectroscopies. This indicates that the line shape in the energy region below the region assigned to the Urbach tail in previous works actually roughly reflects the DOS of occupied in-gap states.

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Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

Lee

Kim

et al. 2017

IEEE Electron Device Lett.

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Band-Bending Effect in the Characterization of Subgap Density-of-States in Amorphous TFTs Through Fully Electrical Techniques

Cited by 4 publications

References 11 publications

Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states

Investigation of Infrared Photo-Detection Through Subgap Density-of-States in a-InGaZnO Thin-Film Transistors

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