This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation. The antireflective properties of these structures in comparison with NWs produced by the conventional Ag-MacEtch method were analysed. The total surface reflectance of 1~7% for SiNWs and ~17% for SiNPs was observed over the entire Si-absorbing region. Moreover, SiNWs prepared by Au-MacEtch demonstrate better antireflective properties in contrast to those formed by conventional Ag-assisted chemical etching. So, the use of SiNWs produced by the modified Au-MacEtch method as the antireflective material is favored over those prepared by Ag-MacEtch due to their higher light absorption and lower reflectance. The possible reason of these findings is discussed.
The paper deals with obtaining of textured silicon surfaces by chemical etching. As a result of experiments based on the modification and optimization of obtaining a textured silicon, several methods of chemical texturing of the crystalline silicon surface were developed. It was shown that modified isotropic and anisotropic etching methods are applicable to create a microrelief on the surface of silicon substrate. These methods in addition to their high conversion efficiency can be used for both mono- and multicrystalline silicon which would ensure their industrial use.
The process of gold nanoparticle (AuNP) precipitation on the silicon (Si) surface by galvanic replacement (GR) in dimethyl sulfoxide (DMSO) solution depending on the concentration of H[AuCl4], temperature, and duration was investigated. It is established that with an increase in the concentration of [AuCl4]− ions (from 2 to 8 mM H[AuCl4]), both the size of AuNPs and their surface coverage density are increased. It is demonstrated that an increase in temperature causes the size of AuNPs to increase from 40 to 80 nm at 40°C to 80–120 and 120–160 nm at 50 and 60°C, respectively. As the duration of the GR process increases, there is a tendency of the particle size growth. Under the studied deposition conditions, the organic aprotic solvent medium contributes to the formation of spherical AuNPs with 2D substrate filling. It is established that the AuNPs deposited on the silicon surface catalyze the process of metal-assisted chemical etching (MacEtch), which makes it possible to obtain Si nanostructures in the form of nanowire arrays.
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