Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface

Nichkalo, Stepan; Druzhinin, A. A.; Еvtukh, А.А.; Bratus, O.L.; Steblova, O.

doi:10.1186/s11671-017-1886-2

Cited by 24 publications

(9 citation statements)

References 29 publications

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“…Based on lowering the reflectance by MacEtch, the efficiency of optoelectronic devices such as solar cells, photodetectors, LEDs, and photoelectrochemical cell was enhanced. [ 32–35 ] Because metal–semiconductor interface may create recombination sites, any metal remaining after etching is typically removed.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Kim

Bong

et al. 2020

Advanced Optical Materials

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Various types of anti‐reflective technologies are capable of increasing the light absorption of optical devices. The electrical conductivity of the collected carriers must also be increased for efficient photoelectric conversion. However, increasing the front electrode area reduces the amount of light absorption, causing shading and resistive losses to conflict in front‐illuminated devices. In this study, a low‐reflectance surface and high‐conductance electrode for Schottky photodiodes are fabricated using metal‐assisted chemical etching (MacEtch). Si nanograss (SiNG) and Ag‐mesh formed via MacEtch serve as a subwavelength surface and buried electrodes, respectively. SiNG increases light absorption without causing shading loss, while the buried Ag‐mesh considerably improves electrical conductivity. The SiNG/Ag‐mesh structure exhibits a solar weighted reflectance of 1.20% and a sheet resistance of 5.48 Ω □−1. The SiNG/Ag‐mesh Schottky photodiode exhibits an external quantum efficiency of 89.5% at a wavelength of 860 nm and an internal photoemission effect in the sub‐band gap. The self‐organized SiNG/Ag‐mesh, fabricated through a simple wet‐etching method, simultaneously addresses the issues of optical and electrical losses, enabling the application of this technique to a wide range of optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Kim

Bong

et al. 2020

Advanced Optical Materials

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“…As it is known [13], gold nanofilms provoke anisotropic etching of a Si substrate mainly along the (100) direction. In addition, due to the high stability of Au in the etching solution, the Si nanostructures with a high aspect ratio can be produced [12,13,18]. Indeed, as it can be seen in Fig.…”

Section: Resultsmentioning

confidence: 97%

“…micro-and nanoelectronics, as well as for the formation of silicon nanostructures of different morphologies (nanopores, nanowires, nanopillars etc.) [12][13][14]. The deposition method and the control of morphology of deposited gold nanoparticles and nanofilms are known to be urgent tasks [15].…”

Section: Introductionmentioning

confidence: 99%

Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method

Nichkalo

Shepida

Chekaylo

2019

PCSS

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The formation conditions of gold nanofilms on silicon (Si) substrate by galvanic replacement in a dimethyl sulfoxide (DMSO) solvent and their subsequent use for the fabrication of Si nanostructures by metal-assisted chemical etching (MACE) method were under study. It was found that the average size and number of Au nanoparticles increase with an increase in the reducible metal ion concentration from 2 to 8 mM HAuCl 4 in DMSO, whereas the distribution of Au nanoparticles in height remains low for all concentrations of the reducible metal. In the temperature range 40 -70°C, a different morphology of the deposited Au nanofilms observed. In particular, at 40 °C, the film is porous mainly homogeneous, whereas at a temperature of 50°C the film is rougher. The subsequent rise in temperature from 60°C to 70°C results in the formation of Au nanofilm with a discontinuous morphology. It was established that regardless of the morphology of deposited Au nanofilms, the Si nanostructures maintain a vertical orientation to the plane of the Si substrate during MACE-etching. The produced Si nanostructures were 1.5 -2.5 μm in height and their average diameter ranged from 100 to 300 nm.

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“…All technological conditions for the AuNP formation on the surface of silicon wafers are suitable for the nanowire fabrication, since, as it was shown in [9,37], Si nanostructures are formed using the metal catalysts both, in the form of discrete close-packed particles, and porous films as well. On the other hand, AuNPs in the form of a porous film are not suitable for plasmonics as the plasmon effects depend on the size and distance between the metal nanoparticles.…”

Section: Advances In Materials Science and Engineeringmentioning

confidence: 99%

“…MacEtch is one of the anisotropic methods for obtaining Si nanostructures of different morphologies, in particular porous Si [1][2][3][4], nanowires, and complex nanostructures [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Gold Nanoparticles via Galvanic Replacement in DMSO and Their Influence on Formation of Silicon Nanostructures

Shepida

Кuntyi

Nichkalo

et al. 2019

Advances in Materials Science and Engineering

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The process of gold nanoparticle (AuNP) precipitation on the silicon (Si) surface by galvanic replacement (GR) in dimethyl sulfoxide (DMSO) solution depending on the concentration of H[AuCl4], temperature, and duration was investigated. It is established that with an increase in the concentration of [AuCl4]− ions (from 2 to 8 mM H[AuCl4]), both the size of AuNPs and their surface coverage density are increased. It is demonstrated that an increase in temperature causes the size of AuNPs to increase from 40 to 80 nm at 40°C to 80–120 and 120–160 nm at 50 and 60°C, respectively. As the duration of the GR process increases, there is a tendency of the particle size growth. Under the studied deposition conditions, the organic aprotic solvent medium contributes to the formation of spherical AuNPs with 2D substrate filling. It is established that the AuNPs deposited on the silicon surface catalyze the process of metal-assisted chemical etching (MacEtch), which makes it possible to obtain Si nanostructures in the form of nanowire arrays.

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Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface

Cited by 24 publications

References 29 publications

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method

Deposition of Gold Nanoparticles via Galvanic Replacement in DMSO and Their Influence on Formation of Silicon Nanostructures

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