Si and Si‐Ge wires for thermoelectrics

Druzhinin, A. A.; Ostrovskii, Igor; Kogut, Igor; Nichkalo, Stepan; Shkumbatyuk, Taras

doi:10.1002/pssc.200900266

Cited by 10 publications

(9 citation statements)

References 17 publications

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“…4. The results obtained to raise their reliability should be checked using 3 method [14]. Nevertheless, the obtained values of the whisker thermal conductivity are in good accordance with literature data [15].…”

Section: An Analysis Of the Thermoelectric Parameters Of The Insb Whisupporting

confidence: 65%

Thermoelectric Properties of InSb Whiskers

Druzhinin¹,

Ostrovskii²,

Khoverko³

et al. 2020

J. Nano- Electron. Phys.

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The article deals with studies of thermoelectric parameters of InSb whiskers with tin concentration of about 4.4•10 18 cm-3 in the temperature range 4.2-300 K. The resistance and Seebeck coefficient were measured experimentally. The InSb whiskers have shown rather high values of Seebeck coefficient exceeding the values of bulk materials by 2-3 times. Using a special method of heat transfer in the whisker joints, the thermal conductivity of the whisker was simulated. The obtained threshold on the temperature dependence of thermal conductivity for InSb whiskers and nanowires in the range of about 100 K connecting with phonon capture of charge carriers indicates high reliability of the data obtained. As a result, ZT parameter of InSb whiskers versus temperature in the temperature range 4.2-300 K was calculated. The obtained value of ZT parameter 0.15 at room temperature indicates a possibility of the whisker use for thermal converters design.

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Section: An Analysis Of the Thermoelectric Parameters Of The Insb Whisupporting

confidence: 65%

Thermoelectric Properties of InSb Whiskers

Druzhinin¹,

Ostrovskii²,

Khoverko³

et al. 2020

J. Nano- Electron. Phys.

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“…sapphire). With this configuration the 3-method [11] was implemented to measure the temperature dependencies of thermal conductivity of whiskers, as in details described elsewhere [12]. Alternating electric current I0sin(t) of a certain frequency , passed through the whisker (electrodes 1 and 4, Fig.…”

Section: Measurements Methodologymentioning

confidence: 99%

“…One can neglect the heat flux in air in these conditions, because it does not exceed 1 % of the heat accumulated in the dielectric substrate. Adopting certain boundary conditions imposed by the limited sample sizes and geometric value of the current flowing through the sample, the solution of continuity equation can be written as follows [11,12]:…”

Section: Measurements Methodologymentioning

confidence: 99%

Thermoelectric Properties of Oblique SiGe Whiskers

Druzhinin¹,

Ostrovskii²,

Liakh-Kaguy³

et al. 2016

J. Nano- Electron. Phys.

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The effects of geometric features of p-type Si1-xGex (x  0.01-0.05) whiskers on their thermoelectric properties have been studied. Oblique whiskers of various diameters (10-100 m) with boron impurity concentration ranging from 10 17 to 10 20 cm-3 have been studied in the temperature range of 290-390 K. The Seebeck coefficient and resistivity of SiGe whiskers increased, while thermal conductivity decreased with decreasing diameter of crystals. However, the thermoelectric figure of merit of SiGe whiskers remained low, resembling that of bulk pure silicon. The influence of dopant impurities and germanium spatial distribution on the electronic and thermal transport in Si1-xGex whiskers was likely dominant, however, little effect of the geometry was also observed. The engineering of whiskers shape and dimensions (up to 15 % improvement of thermopower in whiskers with certain obliquity), combined with appropriate doping, would likely allow for substantial improvement of their thermoelectric performance even in bulk-like scales.

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“…These silicon nanowire record values have not been outperformed since, not even in comparison with SiGe alloy nanowire data, for which best zT ∼ 0.46 at 450 K was reported . Due to a very challenging measurement technique, such fully characterized nanowires are still rare in literature, and much smaller zT values were reported in other references . As a consequence, these values are controversially discussed in the community.…”

Section: Silicon As a Thermoelectric Materialsmentioning

confidence: 99%

Silicon nanostructures for thermoelectric devices: A review of the current state of the art

Schierning

2014

Physica Status Solidi (a)

101

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Silicon is the most important element of modern semiconductor industry. As a thermoelectric converter material, it would be able to promote applications dramatically since device integration and scaling of the fabrication processes could be borrowed from existing technology. Though the thermoelectric performance of single crystalline silicon is only poor, silicon nanostructures have demonstrated a competitive figure of merit. To make use of these nanostructures, novel device architectures are necessary. This review provides an overview over the physical background of silicon as thermoelectric converter material as well as different nanostructures like nanowires, porous nanomeshes, and nanocrystalline bulk and their thermoelectric properties, focusing mostly on experimental data. Further, different thermoelectric converter device concepts including nanowire device concepts, pn junction thermoelectric generators and integrated spot coolers are discussed and their realization with silicon nanostructures briefly sketched. (a) Nanowires, porous nanomeshes and nanocrystalline bulk with promising thermoelectric material's figure of merit. (b) Innovative device concepts using nanowires or large area pn junctions for thermoelectric heat‐to‐electricity conversion.

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Si and Si‐Ge wires for thermoelectrics

Cited by 10 publications

References 17 publications

Thermoelectric Properties of InSb Whiskers

Thermoelectric Properties of InSb Whiskers

Thermoelectric Properties of Oblique SiGe Whiskers

Silicon nanostructures for thermoelectric devices: A review of the current state of the art

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