The first concerned question on the fundamental physics of the resistive switching (RS) effect in metal/Nb-doped SrTiO 3 junctions is whether the RS does take place at the whole interface or at some local regions of the interface. Even though several investigations provide the clues of the filamentary nature of the RS, direct evidences are still required. Moreover, there is obvious inconsistency between the possible filamentary feature and the observed capacitance-voltage (C-V) hysteresis loops. Here, we report direct evidences of a filamentary RS effect in Pt/Nb-doped SrTiO 3 junctions. The virgin Pt/NSTO junctions show an initial RS effect. The current-voltage (I-V) characteristic of the initial RS and the C-V characteristic in the virgin junctions are interpreted by using the theory of metal/semiconductor contacts. The correspondence between the initial RS and the C-V hysteresis loops is also discussed. The most important is that an electroforming process is observed at a large forward voltage, which is a direct indication of the formation of conductive filaments across the Pt/NSTO interface. Following the electroforming, the Pt/NSTO junctions exhibit a filamentary RS effect. The I-V characteristic of the filamentary RS deviates from the theoretical prediction of metal/semiconductor interfaces. However, the C-V characteristic is almost the same as that of the virgin junctions. This demonstrates that the conductive filaments are formed at local regions of the Pt/NSTO interface and a majority of the interface remains invariant. The results clearly show that a filamentary RS effect occurs in the Pt/NSTO junctions and that the observed C-V hysteresis loops are not correlated to the filamentary RS. V C 2014 AIP Publishing LLC. [http://dx.
This Letter studies the effect of the nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based resistive random access memory. We prepared a single layer AlN device and four types of AlN/PbS quantum dot stacked structure devices with different concentrations. Compared with the single layer AlN device, the AlN/PbS quantum dot stacked structure devices exhibit excellent resistive switching characteristics, such as forming-free, low power consumption, and excellent stability. We propose that the resistive switching process is determined by the migration of nitrogen ions and the lead sulfide (PbS) quantum dot layer as a natural nitrogen ion reservoir, which can improve the resistive switching characteristics. Moreover, the size of the natural nitrogen ion reservoir can be modulated by changing the concentration of quantum dots.
At present, the physical mechanism of complementary resistive switching (CRS) devices remains controversial. In this Letter, stable CRS can be achieved in Pt/AlOxNy/Ta resistive random access memory (RRAM). A dynamic evolution from bipolar resistive switching to CRS can be evidently observed in non-inert electrodes RRAM. The causes of CRS behavior are analyzed in detail, and these phenomena are attributed to the different oxidation degrees of the top electrode and propose that the transition state can be used as a signal for the emergence of CRS behavior. Moreover, the model is partially supported by measured switching behavior of the Pt/AlOxNy/TaOx device. This research contributes to the understanding of the CRS behavior physical mechanism in non-inert electrodes RRAM devices.
This Letter investigates the effect of non-inert electrode thickness on the performance of complementary resistive switching (CRS). Five devices with different Ta electrode thicknesses (0, 2, 5, 10, and 20-nm) are fabricated. For devices with 2, 5, and 10-nm electrode thicknesses, CRS behavior can be obtained through an evolution process, while devices with 0 and 20-nm Ta electrode thicknesses always maintain stable bipolar resistive switching behavior. By analyzing the evolution process and current conduction mechanisms, the influence of non-inert electrode thickness on the performance of CRS is studied, and different oxidation degrees of a non-inert electrode are used to explain the different resistive switching performance in these devices. Aside from that, the model is verified by applying an asymmetric voltage sweeping method. This paper further clarifies the physical mechanism of CRS behavior in non-inert electrode resistive random access memory and provides a way to optimize the performance of CRS behavior.
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