High-Resistance State Reduction During Initial Cycles of AlO_xN_y-Based RRAM

Influence of the Position of Local Ta Doping in SiNx Resistive Random Access Memory

“…When testing a new device, a sizeable forming voltage must be applied to the top electrode to establish an initial conductive channel in the RS layer. [24,25] Subsequently, the I-V characteristics of the device were stabilized after several cycles of the tests. The initial process is the periodic testing of the device from its formation to the stage when it has stable characteristics.…”

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

“…14–16 Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,17–27…”

“…[14][15][16] Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,[17][18][19][20][21][22][23][24][25][26][27] Strontium titanate (SrTiO 3 , STO) is an inorganic lead-free perovskite material, which possesses the benefits of non-toxic nature, wide bandgap, and high thermal stability. [28][29][30] Thus, it has been widely employed in solar cells, capacitors, and transistors.…”