Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

Abstract

At present, the physical mechanism of complementary resistive switching (CRS) devices remains controversial. In this Letter, stable CRS can be achieved in Pt/AlOxNy/Ta resistive random access memory (RRAM). A dynamic evolution from bipolar resistive switching to CRS can be evidently observed in non-inert electrodes RRAM. The causes of CRS behavior are analyzed in detail, and these phenomena are attributed to the different oxidation degrees of the top electrode and propose that the transition state can be used as a signal for the emergence of CRS behavior. Moreover, the model is partially supported by measured switching behavior of the Pt/AlOxNy/TaOx device. This research contributes to the understanding of the CRS behavior physical mechanism in non-inert electrodes RRAM devices.

Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode

“…In contrast, the I-V curve in the low voltage region ('1' state), shown in figure 4(d) replotted in a double logarithm scale, shows a linear change with a slope of 1.10, which corresponds to Ohmic conduction mechanism (I ∝ V 1 ) [16]. This suggests that conducive channels The dominated Schottky emission mechanism, based on curve fitting, implies the formation of a barrier at the TE/Albumen interface [19]. Considering the non-inert Al electrode has a strong tendency to be electrically oxidized by the pre-existing oxygen element in Albumen film [32], depth-profiling XPS analysis was performed to determine the chemical bonding states of Al TE layer after the I-V curves measurement.…”

“…To clarify the conduction mechanisms, it is a common practice to analyze the conduction behaviors at LRS and HRS by fitting the I-V characteristics [16,19]. The I-V curve at the '0' state is replotted in double logarithmic scale and linearly fitted in the low positive voltage region, as shown in figure 4(a).…”

“…Device structure simplification was achieved in oxide-based tri-layer geometries, such as TiO x /TiON/TiO x [8], ZnO/SiO x /ZnO [9], and TiO x /TiO 2 /TiO x [10], and double-layer geometries, such as Ta 2 O 5−x /TaO y [11] and TiO 2−x /TiN x O y [12]. Furthermore, CRS behaviors have also been demonstrated in single sandwich structures using inert electrodes [13][14][15][16][17][18] and non-inert electrodes [19,20]. Notably, CRS characteristics are mainly realized in oxide-based heterostructures, which may suffer from the disadvantages of brittleness, incompatibility, and high-cost fabrication [21].…”

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

“…The dynamic evolutionary process from BRS to CRS reveals that the CC value during the forming process and the oxidation degree of the non-inert electrode are the key factors controlling CRS behavior. 46 They proposed that applying a substantial positive bias leads to the formation of a barrier between CFs and the semiconductor-like TaO x layer. Conversely, employing a significant negative bias gives rise to another barrier between the metal-like Ta layer and the AlO x N y layer.…”