Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

Duan, Yiwei; Gao, Haijun; Guo, Jingshu; Yang, Mei; Yu, Zhenxi; Shen, Xuping; Wu, Shuliang; Sun, Yuxin; Ma, Xiaohua; Yang, Yong

doi:10.1063/5.0031056

Cited by 13 publications

(5 citation statements)

References 34 publications

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“…Therefore, it is easier to break the Ta-O-N bonding under a low electric field and reconstitute the thicker conductive filament with oxygen vacancies in the TaON layer, as shown in Figure 4 d [ 27 ]. However, the principle of resistive switching remains that the filled nitride traps release electrons in the direction of the Pt electrode to maintain the reset process in Figure 4 g. As a result, HRS is strengthened with the thicker filament, while similar bipolar switching occurs [ 28 ].…”

Section: Resultsmentioning

confidence: 99%

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Yang

Park

Cho

et al. 2022

IJMS

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Nitride film played an essential role as an excellent diffusion barrier in the semiconductor field for several decades. In addition, interest in next-generation memories induced researchers’ attention to nitride film as a new storage medium. A Pt/AlN/TaN device was investigated for resistive random-access memory (RRAM) application in this work. Resistive switching properties were examined in the AlN thin film formed by atomic layer deposition (ALD). The unique switching feature conducted under the positive voltage was investigated, while the typical bipolar switching was conducted under the application of negative voltage. Good retention and DC, and pulse endurances were achieved in both conditions and compared to the memory performances. Finally, the electronic behaviors based on the unique switching feature were analyzed through X-ray photoelectron spectroscopy (XPS) and the current–voltage (I–V) linear fitting model.

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Section: Resultsmentioning

confidence: 99%

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Yang

Park

Cho

et al. 2022

IJMS

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“…The current and voltage have a linear relationship ( I ∝ V ), as Equation () shows. [ 28,29 ]

J_{Ohm} \propto q n_{0} μ \frac{V}{d}

In this equation, q is the electric charge, n 0 is the number of free carriers, μ is the electron mobility, and d is the film thickness. When the applied voltage is in the higher voltage region, the slope of the ln( I )–ln( V ) curve is about 2, which corresponds to the trap‐filled limit (TFL), as shown in the equation.

J_{TFL} \propto \frac{9}{8} μ ε θ \frac{V^{2}}{d^{3}}

In Equation (), θ represents the ratio of free electrons to trapped electrons.…”

Section: Resultsmentioning

confidence: 99%

Influence of the Position of Local Ta Doping in SiN_x Resistive Random Access Memory

Gao

Sun

et al. 2022

Physica Rapid Research Ltrs

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This article presents an analysis of the effect of the Ta‐doping position on the performance of SiNx‐based resistive random access memories by comparing the electrical properties and conduction mechanisms of the devices. The electrical test results show that when the doping position moves down in the resistive switching (RS) layer, the resistance window of the device increases during the resistive switch process. However, the consistency of the parameter distribution decreases. The conduction mechanism of all Ta‐doped devices behaves as space charge limited current. According to the analysis of the RS model of the device, Ta in the RS layer connects and disconnects with the localized conductive filaments. The adjustment ability of the doping layer on the conductive channel and the reduction of the device stability when the doping position moves up are proposed. Proper Ta doping in the middle of the RS layer of the device allows the device to obtain a large resistance window with relatively stable characteristics.

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“…To compare the switching properties of the Fe 2 O 3 based device with the other reported memory devices [4,9,11,12,[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32], we plotted V set , V reset in figure 2(e) and OFF/ON resistance ratio, cycling endurance in figure 2(f). It clearly demonstrates that the power consumption of amorphous Fe 2 O 3 devices is not only much lower than other FeO x based RRAM, but also lower than that of most low-power RRAM recently reported.…”

Section: Resultsmentioning

confidence: 99%

High performance and low power consumption resistive random access memory with Ag/Fe₂O₃/Pt structure

et al. 2021

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Due to magnetic field tunability and the abundance of iron in the Earth’s crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage (>1 V) and small storage window (<100) limit its application. In this work, the devices with simple Ag/Fe2O3/Pt structure exhibit typical bipolar resistive switching with ultralow set voltage (V set) of 0.16 V, ultralow reset voltage (V reset) of −0.04 V, high OFF/ON resistance ratio of 103, excellent cycling endurance more than 104 and good retention time longer than 104 s. Each major parameter has about an order of magnitude improvement compared to the previous data. The devices demonstrate outstanding stable low power consumption quality. Based on the analysis of the experimental results, a percolation model of silver ion migration was established and confirmed that low operation voltage is attributed to the amorphous oxide layer with large porosity. During electrical testing, the compliance current (I c) and maximum reset voltage (V max) can also affect the device performance. This discovery suggests Fe2O3 memristor has significant potential for application and provides a new idea for the realization of high-performance low-power RRAM.

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Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

Cited by 13 publications

References 34 publications

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Influence of the Position of Local Ta Doping in SiN_x Resistive Random Access Memory

High performance and low power consumption resistive random access memory with Ag/Fe₂O₃/Pt structure

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Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM

Cited by 13 publications

References 34 publications

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Influence of the Position of Local Ta Doping in SiNx Resistive Random Access Memory

High performance and low power consumption resistive random access memory with Ag/Fe2O3/Pt structure

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Influence of the Position of Local Ta Doping in SiN_x Resistive Random Access Memory

High performance and low power consumption resistive random access memory with Ag/Fe₂O₃/Pt structure